[K-1-4] Dark Current Reduction for GeSn p-i-n Photodetectors using Low-Temperature Si Passivation

W. Wang¹、Y. Dong¹、G. Han¹、P. Guo¹、X. Gong¹、X. Xu¹、Q. Zhou¹、L. Wang¹、Z. Xu²、W.K. Loke²、S.F. Yoon²、Y.C. Yeo¹ (1.National Uni. of Singapore、2.Nanyang Technological Univ. (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-5] 15 μm-pitch Cu/Au Interconnections Relied on Self-aligned Low-temperature Thermosonic Flip-chip Bonding Technique for Advanced Chip Stacking Applications

T.T. Bui¹、F. Kato¹、N. Watanabe¹、S. Nemoto¹、K. Kikuchi¹、M. Aoyagi¹ (1.National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-6] Self-Assembly Study to Precisely Align Dies Having Microbump Covered with Non-Conductive Film for Advanced Chip-to-Wafer 3D Integration

Y. Ito^1,2、T. Fukushima¹、K.W. Lee¹、K. Choki²、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ.、2.Sumitomo Bakelike Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-1] InP based 1.55 μm quantum dot materials and lasers for ultra-narrow linewidth applications

J.P. Reithmaier¹、V. Sichkovskyi¹、V. Ivanov¹、K. Kozhuharov¹、G. Eisenstein² (1.Univ. of Kassel、2.Technion (Germany))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-2] Telecom-Band InAs/GaAs Quantum Dot Lasers on Silicon Operating at 100 °C

K. Tanabe¹、T. Rae¹、K. Watanabe¹、Y. Arakawa¹ (1.Univ. Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-3] Broadband near-infrared superluminescent diode based on stacked multi-color InAs/GaAs quantum dots

N. Ozaki¹、T. Yasuda¹、S. Ohkouchi²、E. Watanabe³、N. Ikeda³、Y. Sugimoto³、R.A. Hogg⁴ (1.Wakayama Univ.、2.NEC Corp.、3.NIMS、4.Univ. of Sheffield (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-4] A semiconductor optical amplifier consisting of highly stacked InAs quantum dots fabricated by using the strain-compensation technique

K. Akahane¹、N. Yamamoto¹、T. Umezawa¹、A. Kanno¹、T. Kawanishi¹ (1.National Inst. of Info. and Com. Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-5] High Density and High Aspect Ratio GaAs/AlGaAs Nanopillar array Fabricated by Fusion of Bio-Template and Neutral Beam Etching

Y. Tamura^1,6、A. Higo²、T. KIba^3,6、W. Yunpeng⁴、C. Thomas^1,6、T. Okada¹、W. Hu^1,6、A. Murayama^3,6、M. Sugiyama⁵、Y. Nakano⁴、S. Samukawa^1,2,6 (1.Tohoku Univ.、2.WPI-AIMR, Tohoku Univ.、3.Hokkaido Univ.、4.RCAST, Univ. of Tokyo、5.Univ. of Tokyo、6.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-6] Trap Analysis of InGaN-based Blue Light Emitting Diodes using Current-Transient Methodology

G. Kim¹、E. Park¹、J.H. Kim¹、J.H. Bae¹、D.H. Kang²、B.G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics, Corp., Ltd. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-1] High speed silicon modulators for integrated transceivers

G.T. Reed¹、D.J. Thomson¹、F.Y. Gardes¹、G.Z. Mashanovich¹、Y. Hu¹、K. Li¹、P.W. Wilson¹、L. Zimmermann²、H. Porte³、B. Goll⁴、H. Zimmermann⁴、D. Knoll²、S. Lischke²、S.W. Chen⁵、S.S.H. Hsu⁵、J.M. Fedeli⁶、K. Debnath⁷、T.F. Krauss⁸、L. O'Faolain⁷ (1.Univ. of Southhampton、2.IHP、3.PHOTLINE Tech.、4.Vienna Univ. of Tech.、5.National Tsing Hua Univ.、6.CEA,LETI、7.Univ. of St Andrews、8.Univ. of York (UK))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード