N. Sugii¹、T. Iwamatsu¹、Y. Yamamoto¹、H. Makiyama¹、H. Shinohara¹、H. Oda¹、S. Kamohara¹、Y. Yamaguchi¹、T. Mizutani²、K. Ishibashi³、T. Hiramoto² (1.Low-power Electronics Association & Project (LEAP)、2.The Univ. of Tokyo、3.The Univ. of Electro-Communications (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-2] Speed Enhancement at V_dd = 0.4 V and Randam τ_pd Variability Reduction of Silicon on Thin Buried Oxide (SOTB)

H. Makiyama¹、Y. Yamamoto¹、H. Shinohara¹、T. Iwamatsu¹、H. Oda¹、N. Sugii¹、K. Ishibashi²、Y. Yamaguchi¹ (1.Low-power Electronics Association & Project (LEAP)、2.The Univ. of Electro-Communications (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-3] Influence of work function variation in a metal gate on fluctuation of current-onset voltage for undoped-channel FinFETs

T. Matsukawa¹、Y.X. Liu¹、K. Endo¹、J. Tsukada¹、H. Yamauchi¹、Y. Ishikawa¹、S. O'uchi¹、W. Mizubayashi¹、H. Ota¹、S. Migita¹、Y. Morita¹、M. Masahara¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-4] Comparison of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) and Bulk SRAM Cells

T. Mizutani¹、Y. Yamamoto²、H. Makiyama²、H. Shinohara²、T. Iwamatsu²、H. Oda²、N. Sugii²、T. Hiramoto¹ (1.Univ. of Tokyo、2.Low-power Electronics Association & Project (LEAP) (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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