[H-6-2] A Low-Power Capacitor-Less LDO Regulator with Adjustable Charge Injection Technique for OOK Transmitter

I. Akita¹、S. Asai¹、M. Ishida^1,2 (1.Toyohashi Univ. of Tech.、2.Electronics-Inspired Interdisciplinary Res. Inst. (EIIRIS) (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-6-3] Envelope Tracking CMOS Power Amplifier with High-speed CMOS Envelope Amplifier for Mobile Handsets

E. Yoshida¹、Y. Sakai¹、K. Oishi¹、H. Yamazaki¹、T. Mori¹、S. Yamaura²、K. Suto² (1.Fujitsu Lab. Ltd.、2.Fujitsu Semiconductor Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-1] Advanced GaN Power Devices for Automotive Applications

T. Kachi¹ (1.TOYOTA Central R&D Labs., Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-2] Growth of bulk GaN Crystal by Na Flux Method

Y. Mori¹、M. Imade¹、M. Maruyama¹、M. Yoshimura¹ (1.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-3] Effect of Gate Insulator Material on Dynamic On-Resistance in GaN MIS-HEMT on 6-inch Si

S. Akiyama¹、Y. Watanabe¹、T. Wakabayashi¹、K. Nukui¹、Y. Kotani¹、T. Ogino¹、T. Hosoda¹、M. Kanamura²、K. Joshin²、T. Kikkawa² (1.Fujitsu Semiconductor Ltd.、2.Fujitsu Labs. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-4] Au-Free Low Temperature Ohmic Contacts for AlGaN/GaN Power Devices on 200 mm Si Substrates

A. Firrincieli¹、B. De Jaeger¹、S. You¹、D. Wellekens¹、M. Van Hove¹、S. Decoutere¹ (1.imec (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-5] A Novel GaN-on-Si Substrate Power Transistor using Air-Bridge Matrix Structure

C.W. Yang¹、H.C. Wang¹、H.C. Chiu¹ (1.Univ. of Chang Gung (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-1] Nanostructured GaN Transistors: Pushing the Limits of Linearity and Reliability

E. Matioli¹、B. Lu¹、D.S. Lee¹、F. Gao¹、T. Palacios¹ (1.Massachusetts Inst. of Tech. (USA))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-2] Application of AlTiO thin films to AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

T.Q. Nguyen¹、T. Ui¹、M. Kudo¹、H.A. Shih¹、T. Suzuki¹ (1.JAIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-3] Improved High-Temperture Characteristics of AlGaN/GaN MISHEMTs with ZrO₂/Al₂O₃ Dual Dielectric Films

M. Hatano¹、Y. Taniguchi¹、H. Tokuda¹、M. Kuzuhara¹ (1.Univ. of Fukui (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

617件中(191 - 200)

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