[A-3-1] Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories

S. Kato¹、M. Araidai¹、K. Kamiya¹、T. Yamamoto¹、K. Shiraishi¹、T. Ohyanagi²、N. Takaura² (1.Univ. of Tsukuba、2.Low-power Electronics Association & Project (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Chemical Vapor Deposition GeTe/Sb2Te3 Super-Lattice Phase Change Memory

M. Kitamura¹、T. Morikawa¹、T. Ohyanagi¹、M. Tai¹、M. Kinoshita¹、K. Akita¹、N. Takaura¹ (1.Low-power Electronics Association and Project (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Investigation of Multi-Level-Cell Operation with 2-Step SET Pulse and SET Operation on Super-Lattice Phase Change Memories

T. Egami¹、K. Johguchi¹、S. Yamazaki¹、K. Takeuchi¹ (1.Chuo Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] A New Insight on I_RESET Reduction of Carbon-doped GST based PCM

Q. Hubert^1,2、C. Jahan¹、V. Sousa¹、L. Perniola¹、A. Kusiak³、J.L. Battaglia³、P. Noé¹、M. Bernard¹、C. Sabbione¹、M. Tessaire¹、F. Pierre¹、P. Zuliani⁴、R. Annunziata⁴、G. Pananakakis²、B. De Salvo¹ (1.CEA - LETI, Minatec Campus、2.IMEP - LAHC、3.Lab. I2M, Univ. de Bordeaux、4.STMicroelectronics (France))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] A Novel High-Density Embedded AND-type Spilt Gate Flash Memory

W.C. Shen¹、H.W. Pan¹、Z.S. Yang¹、Y.D. Chih²、T.L. Lee¹、C.W. Lien¹、Y.C. King¹、C.J. Lin¹ (1.National Tsing Hua Univ.、2.Taiwan Semiconductor Manufacturing Company (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] A Logic CMOS Process Compatible Two-Bit MTP SONOS Nonvolatile Memory

C.T. Tsai¹、H.T. Wang¹、C.H. Chou¹、Y.H. Ho¹、S.S. Chung¹、W. Chang²、S.D. Wang²、C.H. Chen² (1.National Chiao Tung University、2.UMC (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu¹、T. Matsukawa¹、K. Endo¹、S. O'uchi¹、J. Tsukada¹、H. Yamauchi¹、Y. Ishikawa¹、W. Mizubayashi¹、Y. Morita¹、S. Migita¹、H. Ota¹、M. Masahara¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-4] Investigation of Random Grain-Boundary Induced Variability for Stackable NAND Flash Using 3D Voronoi Grain Patterns

C.W. Yang¹、P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] Optimum Crystal Orientation in Rhombohedral PZT Films for FeRAM Application

H. Funakubo¹、Y. Ehara¹、T. Oikawa¹、T. Yamada^2,3、S. Utsugi¹ (1.Tokyo Inst. Tech.、2.Nagoya Univ.、3.JST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-2] Organic ferroelectric gate FET memory using high-mobility rubrene thin film

T. Kanashima¹、Y. Katsura¹、M. Okuyama² (1.Osaka Univ.、2.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード