ITO Resistive RAM (RRAM)

C.L. Lin¹、Y.H. Yang¹、C.M. Wu¹、P.C. Juan²、C.H. Soh¹、Y.L. Huang¹、W.Y. Chang¹ (1.Feng Chia Univ.、2.Mingchi Univ. of Tech. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] High Performance Oxide Diode

I..P. Radu^1,2、B. Govoreanu¹、M.R. Ikram^1,2、A.P. Peter¹、K. Martens^1,2、H. Hody¹、W. Kim¹、M. Toeller³、V. Paraschiv¹、P. Favia¹、S. Clima¹、S. De Gendt^1,2、M. Heyns^1,2、A. Stesmans²、M. Jurczak¹ (1.imec、2.Univ. of Leuven、3.Tokyo Electron Ltd. (Belgium))

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[A-8-4] Pulsed Operation of Resistance Switching Memory of Si/CaF₂/CdF₂ Resonant-tunneling Quantum-well Structures

J. Denda¹、K. Suda¹、Y. Kuwata¹、M. Watanabe¹ (1.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme

A. Veloso¹、G. Boccardi¹、L.A. Ragnarsson¹、Y. Higuchi²、H. Arimura^1,3、J.W. Lee^1,3、E. Simoen¹、M.J. Cho¹、Ph.J. Roussel¹、V. Paraschiv¹、X. Shi¹、T. Schram¹、S.A. Chew¹、S. Brus¹、A. Dangol¹、E. Vecchio¹、F. Sebaai¹、K. Kellens¹、N. Heylen¹、K. Devriendt¹、H. Dekkers¹、A. Van Ammel¹、T. Witters¹、T. Conard¹、I. Vaesen¹、O. Richard¹、H. Bender¹、R. Athimulam¹、A. Thean¹、N. Horiguchi¹ (1.Imec、2.Panasonic、3.K. U. Leuven (Belgium))

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[B-1-3] Si:C-S/D Engineering using Cascade C₇H_x Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

T. Yamaguchi¹、Y. Kawasaki¹、T. Yamashita¹、Y. Nishida¹、M. Mizuo²、K. Maekawa¹、M. Fujisawa¹ (1.Renesas Electronics Corp.、2.Renesas Semiconductor Engineering Corp. (Japan))

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[B-1-4] Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo¹、T. Yamaguchi²、S. Kudo²、Y. Hirose^1,2、H. Kimura²、J. Tsuchimoto²、N. Hattori² (1.Renesas Semiconductor Engineering Corp.、2.Renesas Electronics Corp. (Japan))

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[B-2-1] Low-temperature Microwave Annealing Process for Ge MOSFETs

Y.J. Lee^1,6、S.S. Chuang²、C.I. Liu³、F.K. Hsueh¹、P.J. Sung¹、C.T Wu¹、C.H. Lai⁴、Y.M. Wan³、M.I. Current⁵、T.Y. Tseng² (1.National Nano Device Lab.、2.National Chiao Tung Univ.、3.I-Shou Univ.、4.Chung Hua Univ.、5.Current Scientific、6.National Chung Hsing Univ. (Taiwan))

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[B-2-2] Low NiGe Contact Resistances by Carrier Activation Enhancement (CAE) Techniques for Ge CMOSFETs

H. Miyoshi¹、T. Ueno¹、Y. Hirota¹、J. Yamanaka²、K. Arimoto²、K. Nakagawa²、T. Kaitsuka¹ (1.Tokyo Electron Ltd.、2.Univ. of Yamanashi (Japan))

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[B-2-3] Formation of Epitaxial Nickel Monogermanide on Ge(100) by Annealing of Ni/Sn Bilayer

M. Koike¹、Y. Kamimuta¹、Y. Moriyama¹、Y. Kamata¹、E. Kurosawa¹、T. Tezuka¹ (1.AIST (Japan))

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[B-2-4] Epitaxial Nickel Distanogermanide [Ni(Ge_1-xSn_x)₂] Contact Formation using Pulsed Laser Annealing

X. Xu¹、W. Wang¹、Y. Dong¹、E.Y.J. Kong¹、X. Gong¹、Q. Zhou¹、G. Han¹、P. Guo¹、L. Wang¹、Y.C. Yeo¹ (1.National Univ. of Singapore (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード