[C-6-2] Reliability Characteristics of MoS₂ FETs

W. Park¹、Y.G. Lee¹、J.J Kim²、S.K. Lee¹、C.G. Kang¹、C. Cho²、S.K. Lim²、U. Jung¹、W.K. Hong³、B.H. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech.、2.Gwangju Inst. of Sci. and Tech.、3.Korea Basic Sci. Inst. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-3] Photovoltaic Infrared Photoresponse of Graphene Quantum Hall Systems due to Cyclotron Resonance

R. Kashiwagi¹、S. Masubuchi¹、M. Onuki¹、M. Arai¹、K. Watanabe²、T. Taniguchi²、T. Machida^1,3 (1.Univ. of Tokyo、2.National Inst. for Material Sci.、3.PRESTO-JST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-4] Asymmetry of Conduction and Valence Bands in Bilayer Graphene Estimated by The Quantum Capacitance Measurement

K. Kanayama¹、K. Nagashio¹、T. Nishimura¹、A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-5] Effect of hydrogen annealing on electronic transport properties of quasi-free-standing monolayer graphene

S. Tanabe¹、M. Takamura¹、Y. Harada¹、H. Kageshima¹、H. Hibino¹ (1.NTT Basic Res. Labs. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-6] Reducing Carrier Density Pinning at Graphene/Metal Interfaces Using Multi-layer Graphene

K. Katakura¹、S. Nihei¹、H. Tomori¹、Y. Ito¹、Y. Ootuka¹、A. Kanda¹ (1.Univ. of Tsukuba (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-1] Process/Design co-optimization with FDSOI Technology for Advanced CMOS Applications

F. Arnaud¹、N. Planes¹ (1.STMICROELECTRONICS (France))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-2] Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS

T. Mizuno¹、Y. Nakahara¹、Y. Nagata¹、Y. Suzuki¹、Y. Kubodera¹、Y. Shimizu¹、T. Aoki¹、T. Sameshima² (1.Kanagawa Univ.、2.Tokyo Univ. of Agriculture/Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-3] Standard CMOS Based One-Time Programmable Switches with Gate-Induced Permanent Source-Drain Path

K. Zaitsu¹、K. Tatsumura¹、M. Matsumoto¹、M. Oda¹、S. Yasuda¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-4] The Influence of Post-Etch InGaAs Fin Profile on Electrical Performance

Ts. Ivanov^1,2、A. Pourghaderi¹、D. Lin¹、J.K. Yu³、S. Tan³、K. Mikhaylich³、Y. Kimura³、D. Hellin⁴、J. Geypen¹、H. Bender¹、J. Vertommen⁴、G. Kamarthy³、N. Collaert¹、J. Marks³、V. Vahedi³、R. Arghavani³、A. Thean¹ (1.IMEC、2.KULeuven、3.Lam Res., USA、4.Lam Res., Belgium (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-5] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design

R. Kuroda¹、Y. Nakao¹、A. Teramoto²、S. Sugawa^1,2、T. Ohmi² (1.Graduate School of Engineering, Tohoku Univ.、2.New Industry Creation Hatchery Center, Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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