[PS-1-2] Synthesis of Perovskite Structure SrHfO₃ Thin Films on Si Substrates Using RF Sputtering and Rapid Thermal Anneal

S. Migita¹、Y. Morita¹、M. Masahara¹、H. Ota¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-3] A New Ar Desorption Peak in Thermal Desorption Spectroscopy Measurement of Sputtered HfO₂ Accompanied by its Structural Phase Transformation

T. Iwai¹、T. Yajima¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-4] Study of the interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks through the ultra-high vacuum annealing

X. Li¹、T. Yajima¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-5] Observation of Scattering Effect on Carrier Mobility of MOSFET with La-incorporated-HfO₂ Gate Dielectric

S.W. You¹、M. Hasan¹、M.C. Nguyen¹、Y.S. Jeon¹、D.T. Tong¹、D.H. Lee¹、J.K. Jung¹、R. Choi¹ (1.Inha Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-6] Mechanism of Low-Temperature Activation of B in Si by Soft X-ray Irradiation

A. Heya¹、T. Fukuoka¹、N. Matsuo¹、K. Kanda²、T. Noguchi³ (1.Univ.of Hyogo、2.LASTI, Univ.of Hyogo、3.Univ.of the Ryukyus (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-7] Detection of Effect of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution

S. Yamahori¹、K. Sawano¹、E. Ikenaga²、Y. Shiraki¹、H. Nohira¹ (1.Univ. of Tokyo City、2.Inst. of Japan Synchrotron Radiation Research (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-8] Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO₂/Ge Stacks on GeO₂ Thickness by X-ray Photoelectron Spectroscopy

X.L. Wang¹、S.K. Wang¹、J. Zhang²、W.W. Wang¹、H.G. Liu¹、J. Yan¹、C. Zhao¹、D.P. Chen¹、T.C. Ye¹ (1.Inst. of Microelectronics, Chinese Academy of Sciences、2.North China Univ. of Tech. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-9] Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO₂ Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy

W.F. Zhang^1,2、C.H. Lee^1,2、C.M. Lu¹、T. Nishimura^1,2、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-10] Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices

L. Han^1,2、S.K. Wang¹、B.Q. Xue¹、X. Zhang²、W.R. Wu³、H.D. Chang¹、W. Zhao¹、B. Sun¹、Y. Zhao³、H.G. Liu¹、Y.P. Cui² (1.Inst. of Microelectronics、2.Southeast Univ.、3.Nanjing Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-11] Effect of Oxygen Potential Lowering in N-doped GeO₂ on Suppression of GeO Desorption and Planarization of Ge Interface

T. Tabata^1,2、C.H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

617件中(361 - 370)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
次へ »

▲