[B-2-3] Effect of TEOS treatment on the properties of periodic nanoporous silica low-k film

Yoshiaki Oku、Kazuhiro Yamada、Norikazu Nishiyama、Shunsuke Tanaka、Korekazu Ueyama、Nobuhiro Hata、Takamaro Kikkawa (1.MIRAI Project, ASET、2.Graduate School of Engineering Science, Osaka University、3.MIRAI Project, ASRC, AIST、4.RCNS, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-4] Low-cost Cu Interconnects Using Direct Patterning Process (DPP) of Photo-sensitive MSZ with Low-k, Bottom Anti-reflective layer

Munehiro Tada、Takashi Ogura、Yoshihiro Hayashi (1.Silicon Systems Research Laboratories, NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-5] Influence of Surface Oxide of Sputtered TaN Film on Displacement Plating of Cu

Zenglin Wang、Hiroyuki Sakaue、Shoso Shingubara、Talayuki Takahagi (1.Graduate School of Advanced Science of Matter, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-1] Advanced Electron Microscopy Characterization of Semiconductor Surface and Interface Processes

Rudolf M. Tromp (1.IBM T.J. Watson Research Center)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-2] A Novel TEM/AFM/STM Microscopy for Cu Nano-Wire Electromigration

Satoru FUJISAWA、Takamaro KIKKAWA、Tokushi KIZUKA (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)、2.Research Center for Nanodevices and Systems, Hiroshima University、3.Institute of Materials Science, University of Tsukuba)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Lattice Strain in Scaled Devices Revealed by Using Convergent-Beam Electron Diffraction

Akio Toda、Kensuke Okonogi、Nobuyuki Ikarashi、Haruhiko Ono (1.Silicon Systems Research Laboratories, NEC Corporation、2.Device Development Department, Device Development Division, Elpida Memory Inc.)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-4] Characterization of Si Surface Stress in Various Dielectric Thin Film/Si Structure by Photoreflectance Spectroscopy

Masayuki Sohgawa、Hirofumi Kanda、Takeshi Kanashima、Akira Fujimoto、Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University、2.Dept. Electrical Engineering, Wakayama National College of Technology)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-5] Microscopic identification of implantation damage centers in Si ULSIs

Takahide Umeda、Yasunori Mochizuki (1.Silicon Systems Research Lab., NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-1] High-Resolution Compositional Profiling of High-к Gate Stack Structures

T. Nishimura、D. Starodub、T. Gustafsson、E. Garfunkel (1.Departments of Chemistry and Physics, Rutgers University)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-2] Ultrathin Zr Silicate Gate Dielectrics with Compositional Gradation

Heiji Watanabe (1.Silicon Systems Research Laboratories, NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード