[E-7-3] InP hot electron transistors modulated by gate electrodes sandwiching emitter mesa

K. Takeuchi、H. Maeda、R. Nakagawa、Y. Miyamoto、K. Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology、2.CREST, Japan Science and Technology Corporation、3.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-4] Single-Electron Transistors with Large-Enegry Binary States in a GaN Quantum Dot

Koji Kawasaki、Yasunori Kitaichi、Misaichi Takeuchi、Yoshinobu Aoyagi (1.Tokyo Institute of Technology, Interdisciplinary Graduate School of Science & Engineering、2.CREST, JST (Japan Science and Technlogy))

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-1] Carbon Nanotube SPM Probe Fabricated by NanoEngineering

Seiji Akita、Yoshikazu Nakayama (1.Dept. of Physics and Electronics, Graduate School of Eng., Osaka Pref. Univ.、2.Handai Frontier Research Center, Graduate School of Eng., Osaka Univ.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-2] Top-Gate Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance

Fumiyuki Nihey、Hiroo Hongo、Yukinori Ochiai、Masako Yudasaka、Sumio Iijima (1.Fundamental Research Laboratories, NEC Corporation、2.Japan Science and Technology Corporation, c/o NEC Corporation、3.Japan Fine Ceramics Center, c/o National Institute of Advanced Industrial Science and Technology (AIST)、4.Research Center for Advanced Carbon Materials, AIST、5.Faculty of Science and Technology, Meijo University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-3] Fabrication of Two-Dimensional Carbon Nanostructures Using Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition

Mineo Hiramatsu、Kenichi Shiji、Hiroshi Amano、Yoshinori Ando、Masaru Hori (1.Department of Electrical and Electronic Engineering, Meijo University、2.Department of Materials Science and Engineering, Meijo University、3.Department of Quantum Engineering, Nagoya University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-4] Control of Electrical Property in Multi-Wall Carbon Nanotube using Electrical Breakdown

Nobuyuki Aoki、Koichiro Miyamoto、Nobuko Oguri、Takahiko Sasaki、Koji Ishibashi、Yuichi Ochiai (1.Department of Materials Technology & Center for Frontier Electronics and Photonics, Chiba University、2.Advanced Device Laboratory, RIKEN)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-1] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs

Mitsuhisa Ikeda、Yusuke Shimizu、Taku Shibaguchi、Hideki Murakami、Seiichi Miyazaki (1.Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-2] Hybrid Silicon Nanocrystal Silicon Nitride Memory

R. F. Steimle、R. A. Rao、B. Hradsky、R. Muralidhar、M. Sadd、M. Ramon、S. Straub、S. Bagchi、X. D. Wang、J. Hooker、B. E. White Jr. (1.Motorola, DigitalDNA Laboratories)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-3] Monte-Carlo Simulation of Single-Electron Nanocrystal Memories

Jae Sung Sim、Jihye Kong、Jong Duk Lee、Byung-Gook Park (1.School of Electrical Engineering, Seoul National University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-4] Growth of Si Nanowire Using Metal-Induced Lateral Crystallization

Kenji Makihira、Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード