[J-10-2] Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs

S. Sakashita, T. Kawahara, M. Mizutani, M. Inoue, K. Mori, S. Yamanari, M. Higashi, Y. Nishida, K. Honda, N. Murata, J. Tsuchimoto, J. Yugami, K. Fujiwara, M. Yoneda (1.Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-10-3] Work Function Instability at pMOS Metal/HfSiON Interfaces

Yoshinori Tsuchiya, Masato Koyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corp.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-10-4] Thermal stability of metal electrodes and its impact on gate dielectric characteristics

H. Park, H. C. Wen, M. Chang, M. Jo, R. Choi, B. H. Lee, S.C. Song, C. Y. Kang, T. Lee, G. Brown, J. C. Lee, H. Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 2.SEMATECH, 3.IBM Assignee, 4.Microelectronics Research Center, The University of Texas at Austin)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-1] Suppression of Leakage Current and Moisture Absorption of La2O3 films with Ultraviolet Ozone Post Treatment

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-2] Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System

Tsunehiro Ino, Yuuichi Kamimuta, Masato Koyama, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-3] Interface Layer Control at Y2O3/Ge by N2 and O2 Annealing on Ge(100) and Ge(111) Surfaces

H. Nomura, K. Kita, T. Nishimura, A. Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-4] Non-crystalline Stable Gate Dielectrics for Advanced Nano-Cmos Devices

Gerald Lucovsky, Sanghyun Lee, Jan Luning (1.NC State University, Department of Physics, 2.Stanford Synchrotron Radiation Laboratory)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-5] Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation

Takeo Matsuki, Seiji Inumiya, Nobuyuki Mise, Takahisa Eimori, Yasuo Nara (1.Research Department 1, Semiconductor Leading Edge Technologies, Inc.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-6] Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results

Ralf Endres, Yordan Stefanov, Udo Schwalke (1.Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-7] Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks

Shinya Horie, Takashi Minami, Naomu Kitano, Motomu Kosuda, Heiji Watanabe, Kiyoshi Yasutake (1.Graduate School of Engineering, Osaka University, 2.Canon ANELVA Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download