[PS-6-11] High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel by Atomic Layer Deposition
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
734件中(451 - 460)
[PS-6-12] Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered ZrxSi1-xO2 Gate Dielectrics
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-13] Study of Fabrication and Current-voltage Characteristics of MoS2/WSe2 Heterojunction Diode
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-14(Late News)] Hydrazine (N2H4)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-01] InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH3 Post Remote-Plasma Treatment
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-02] Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-03] Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO2/InGaAs NMOS
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-04] Effect of Interface Traps on the Device Performances of the Tunneling Field-Effect Transistors Based on InGaAs
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-05] Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)
[PS-6-06] The Study of GaN-based Fin-HEMT with Low Current Collapse Phenomenon by Plasma Enhanced Atomic Layer Deposition
2016 International Conference on Solid State Devices and Materials
|2016年9月28日(水)