Oral presentation

[17p-A11-1~17] 6.4 New thin-film materials

Wed. Sep 17, 2014 1:15 PM - 6:00 PM A11 (E215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[17p-A11-1] Influence of light scattering on structures of optical thin films by substrate surface roughness 2

^○Takuya Sugiyama¹, Hiroshi Murotani¹, Shigeharu Matumoto², Hiromitu Honda², Koichi Tamura³, Muneo Sugiura³ (Department of optical and Imaging Science & Technology School of Engineering of Tokai University¹, SHINCRON CO.,LTD², TOKAI OPTICAL CO.,LTD³)

1:30 PM - 1:45 PM

[17p-A11-2] Properties of IrO_xH_ｙ film prepared by reactive sputtering using H₂O gas

^○Satoshi Ito¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹ (Kitami Inst. Tech¹)

1:45 PM - 2:00 PM

[17p-A11-3] Sputtering of Lanthanum Titanium Oxide for Optical Thin Films (3)

^○(M1)Ryota Nakano¹, Hirosi Murotani¹ (Course of electro photo optics, Graduate school of engineering, Tokai University¹)

2:00 PM - 2:15 PM

[17p-A11-4] Suppression of property change in Ag thin films by introducing organic monolayers

^○(M1)Tatsuya Sasaki¹, Midori Kawamura¹, Yoshio Abe¹, Keiho Kim¹ (KIT¹)

2:15 PM - 2:30 PM

[17p-A11-5] Porosity of yttria films synthesized by flame deposition method

^○Tomoyuki Shirai¹, Atsushi Nakamura^1,2, Shigeo Ohshio¹, Ikumi Toda¹, Keiji Komatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹, Chubu Chelest Co., Ltd²)

2:30 PM - 2:45 PM

[17p-A11-6] Deposition rate and porosity of erbia films synthesized by flame deposition method

^○Tomoyuki Shirai¹, Atsushi Nakamura^1,2, Shigeo Ohshio¹, Ikumi Toda¹, Keiji Komatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹, Chubu Chelest Co., Ltd²)

Break 14:45～15:00 （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[17p-A11-7] Synthesis of SrO films by atmospheric chemical vapor deposition technique

^○(P)Keiji Komatsu¹, Morito Tanabe¹, Shigeo Ohshio¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

3:15 PM - 3:30 PM

[17p-A11-8] Synthesis of SrO films with various carrier gases by atmospheric chemical vapor deposition

^○(P)Keiji Komatsu¹, Shigeo Ohshio¹, Ikumi Toda¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

3:30 PM - 3:45 PM

[17p-A11-9] Evaluation of Pr oxide thin films structure on Si deposited by sputtering method

^○Kenta Hara¹, Kenta Kumagai¹, Yutaro Haraguchi¹, Setsu Suzuki², Keiji Ishibashi², Yasuhiro Yamamoto¹ (Hosei Univ.¹, Comet Inc.²)

3:45 PM - 4:00 PM

[17p-A11-10] Characterization of Al doped CeO2 thin films deposited by O2 introduced Ar sputtering

^○Notani Yuki¹, Hara Kenta¹, Osawa Takashi¹, Aoki Kazuya¹, Fujiyama Keita¹, Suzuki Setsu², Ishibashi Keiji², Yamamoto Yasuhiro¹ (Hosei Univ.¹, Comet Inc.²)

4:00 PM - 4:15 PM

[17p-A11-11] Preparation of Sr₂SiO₄ thin films on Si substrates by PLD using a Sr₂SiO₄ polycrystalline target

^○(M1)Keiji Imanishi¹, Shota Taniwaki¹, Yasushi Hotta^1,3, Haruhiko Yoshida^1,3, Koji Arafune^1,3, Atsushi Ogura^2,3, Shin-ichi Satoh^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

4:15 PM - 4:30 PM

[17p-A11-12] Preparation of AlO_x/SiO_x structure by post-annealing of AlO_x/Si precursor

^○(M1)Shozo Miyake¹, Yuki Toyoshima¹, Yasushi Hotta^1,3, Haruhiko Yoshida^1,3, Koji Arafune^1,3, Atsushi Ogura^2,3, Shin-ichi Satoh^1,3 (Univ.of Hyogo¹, Meiji Univ.², JST-CREST³)

Break 16:30～16:45 （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

[17p-A11-13] Effect of the Sputter-deposition Conditions of Upper Electrode Films in OLED

^○Yoichi Hoshi¹, Daichi Hamaguchi¹, Shin-ichi Kobayashi¹, Takayuki Uchida¹, Hidehiko Shimizu² (Tokyo Polytechnic Univ.¹, Niigata Univ.²)

5:00 PM - 5:15 PM

[17p-A11-14] Fabrication of Wurtzite (Al,Ti)N Thin Film Thermistor with Sputtering Method

^○Noriaki Nagatomo¹, Hitoshi Inaba¹, Hiroshi Tanaka¹, Toshiaki Fujita¹, Kazuta Takeshima¹, Fumio Matsumoto¹, Kunio Yamaguchi¹ (Mitsubishi Materials¹)

5:15 PM - 5:30 PM

[17p-A11-15] NTC Thermistor Properties of Wurtzite (Al,Ti)N Thin Film

^○Toshiaki Fujita¹, Hiroshi Tanaka¹, Noriaki Nagatomo¹ (Mitsubishi Materials¹)

5:30 PM - 5:45 PM

[17p-A11-16] Raman supectroscopy of MgF₂ thin film dispersed with metal nanoparticles prepared by sol-gel method

^○Nobuaki Soujima¹, Eisuke Yokoyama², Moriaki Wakaki¹, takehisa Shibuya¹ (Tokai Univ.¹, Tokyo polytechnic Univ.²)

5:45 PM - 6:00 PM

[17p-A11-17] Formation of high-density Au nanoparticles with an areal particle density of 10¹²/inch² and improvement in arrangements of order of Au particles by sputtering method

^○Yukiko Yasukawa¹, Xiaoxi Liu², Akimitsu Morisako² (Chiba Inst. Tech.¹, Shinshu Univ.²)

Oral presentation

[18a-A11-1~10] 6.4 New thin-film materials

Thu. Sep 18, 2014 9:00 AM - 11:45 AM A11 (E215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A11-1] Controlling p/n conduction in copper nitride epitaxial films

^○Kosuke Matsuzaki^1,2, Hideo Hosono^1,2, Tomofumi Susaki^1,2 (MCES Tokyo Tech¹, MSL Tokyo Tech²)

9:15 AM - 9:30 AM

[18a-A11-2] Preparation of ionic liquid nano-thin films on oxide single crystal substrates

^○Shingo Maruyama¹, Kaho Toyabe¹, Miho Yamauchi¹, Yuji Matsumoto¹ (Tohoku Univ.¹)

9:30 AM - 9:45 AM

△ [18a-A11-3] KBr(111) Crystal Growth via an Ionic Liquid Flux in a Vacuum

^○Miho Yamauchi¹, Shingo Maruyama¹, Noboru Ohashi¹, Yuji Matsumoto¹ (Tohoku Univ.¹)

9:45 AM - 10:00 AM

△ [18a-A11-4] Control of anion arrangement in perovskite oxynitirde SrTaO₂N with epitaxial strain

^○Daichi Oka¹, Yasushi Hirose^1,2,3, Hideyuki Kamisaka^1,3, Tomoteru Fukumura^1,2,3, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, KAST², JST-CREST³)

10:00 AM - 10:15 AM

△ [18a-A11-5] Characteristics of Carbon-doped InSiO channel material

^○Kazunori Kurishima^1,2, Toshihide Nabatame², Nobuhiko Mitoma², Takio Kizu², Kazuhito Tsukagoshi², Tomomi Sawada², Akihiko Ohi², Ippei Yamamoto^2,3, Tomozi Ohishi³, Toyohiro Chikyow², Atsushi Ogura¹ (Meiji Univ.¹, NIMS WPI-MANA², Shibaura Institute of Technology³)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [18a-A11-6] Nonmetal-metal transition in Li-inserted Cu₃N

^○Kohei Maruya¹, Kou Shimizu¹, Ryuichiro Ino¹, Yoshihiko Ninomiya¹, Atushi Sato¹, Naoomi Yamada¹ (Chubu Univ.¹)

10:45 AM - 11:00 AM

△ [18a-A11-7] Topotactic fluorination of Sr_n+1Ru_nO_3n+1 thin films by polyvinyliden fluoride

^○Keisuke Kawahara¹, Akira Chikamatsu^1,2, Tsukasa Katayama¹, Tomoya Onozuka¹, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, JST-CREST², KAST³)

11:00 AM - 11:15 AM

△ [18a-A11-8] Fabrication of aromatic polyurea films by vapor deposition polymerization into ionic liquids

^○Yuya Osawa¹, Noboru Ohashi¹, shingo Maruyama¹, Yuji Matsumoto¹ (Tohoku Univ.¹)

11:15 AM - 11:30 AM

△ [18a-A11-9] Fabrication of DBTTF-TCNQ complex with ionic liquid by vacuum deposition

^○kohei kuroishi¹, noboru ohashi^1,2, shingo maruyama¹, yuji matsumoto¹ (Tohoku Univ¹, AIST²)

11:30 AM - 11:45 AM

△ [18a-A11-10] Observation of SiC Substrates / Flux Interface in the Flux Growth of SiC with High-Temperature and High-Vacuum Laser Microscope

^○Aomi Onuma¹, Shingo Maruyama¹, Shunta Harada², Toru Ujihara², Tomohisa Kato^3,4, Kazuhisa Kurashige^4,5, Hajime Okumura^3,4, Yuji Matsumoto^1,6 (Tohoku Univ.¹, Nagoya Univ.², AIST³, FUPET⁴, Hitachi Chemical⁵, JST-ALCA⁶)

Oral presentation

[18p-A11-1~17] 6.4 New thin-film materials

Thu. Sep 18, 2014 1:15 PM - 6:15 PM A11 (E215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:45 PM

▲ [18p-A11-1] 「Invited lecture of overseas researcher」（30min.）
Tuning the magnetic properties of Co thin films by oxygen ion implantation

^○Jose Francisco Lopez-Barbera¹, E Menéndez², H Modarresi², M Kirby³, B.J. Kirby⁴, J Åkerman^3,5, J.A. Borchers⁴, A Vantomme², K Temst², Josep Nogués^1,6 (ICN2-Institut Catala de Nanociencia i Nanotecnologia, Spain¹, KU Leuven, Instituut voor Kern- en Stralingsfysica,Belgium², University of Gothenburg,Sweden³, National Institute of Standards and Technology,USA⁴, Royal Institute of Technology,Sweden⁵, ICREA -Institucio Catalana de Recerca i Estudis Avançat,Spain⁶)

1:45 PM - 2:00 PM

▼ [18p-A11-2] Electronic conductivity of impurity-doped Zn₃N₂ thin films

^○(D)Xiang Cao¹, Kouki Watarai¹, Yoshihiko Ninomiya¹, Atsushi Sato¹, Naoomi Yamada¹ (Chubu Univ.¹)

2:00 PM - 2:15 PM

▼ [18p-A11-3] Effect of oxidation process on MoS₂ thin film growth

^○Sinae Heo^1,2, Ryoma Hayakawa¹, Toyohiro Chikyow¹, Yutaka Wakayama^1,2 (NIMS¹, Kyusyu University²)

2:15 PM - 2:30 PM

▼ [18p-A11-4] Microfluidic control by temporally modulated thermoplasmonics

^○Kyoko Namura^1,2, Kaoru Nakajima¹, Kenji Kimura¹, Motofumi Suzuki¹ (Kyoto Univ.¹, J S P S Research Fellow²)

2:30 PM - 2:45 PM

▲ [18p-A11-5] Impact of thermal expansion of substrates on phase transition temperature of VO₂ films

^○Joe Sakai¹, Mustapha Zaghrioui¹, Masaaki Matsushima², Hiroshi Funakubo², Kunio Okimura³ (GREMAN, Univ. Tours¹, Tokyo Tech.², Tokai Univ.³)

2:45 PM - 3:00 PM

▲ [18p-A11-6] Influence of nitrogen oxide gas supply during ZnO film growth using high-temperature H₂O generated from a catalytic reaction

Yusuke Teraguchi¹, Yuuki Ohashi¹, Naoya Yamaguchi¹, Yasuhiro Tamayama¹, ^○Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

3:00 PM - 3:15 PM

▲ [18p-A11-7] Preparation of a single-phase TaO₂ thin film

^○Yuji Muraoka¹, Yuki Fujimoto¹, Takanori Wakita¹, Takayoshi Yokoya¹ (Okayama Univ.¹)

Break 15:15～15:30 （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[18p-A11-8] Orientation control and Li-ion conduction measurement of LiH thin films

^○Hiroyuki Oguchi¹, Tamio Ikeshoji^2,3, Hiroki Kuwano¹, Susumu Shiraki³, Shin-ichi Orimo^2,3, Taro Hitosugi³ (Tohoku Univ. Engineering¹, Tohoku Univ. IMR², Tohoku Univ. AIMR³)

3:45 PM - 4:00 PM

[18p-A11-9] Crystal growth of r-oriented Cr₂O₃ thin films on YAlO₃ (001) substrate

Yutaro Hayashi¹, Takashi Sumida¹, Takumi Nakamura¹, Kosuke Hashimoto¹, Hiroshi Yamamoto¹, ^○Nobuyuki Iwata¹ (CST, Nihon Univ,¹)

4:00 PM - 4:15 PM

[18p-A11-10] Thin Film Growth of Manganese Nitride Mn₃(Cu_xAg_1-x)N

^○Takafumi Hatano¹, Toshiki Matsumoto¹, Kensuke Matsumoto¹, Koshi Takenaka², Hiroshi Ikuta¹ (Dept. Crystalline Materials Science, Nagoya Univ.¹, Dept. Appl. Phys., Nagoya Univ.²)

4:15 PM - 4:30 PM

[18p-A11-11] Structural variation of NdNiO₃ thin film by hydrogen doping

^○Tomoya Onozuka¹, Akira Chikamatsu^1,2, Tsukasa Katayama¹, Tomoteru Fukumura^1,2,3, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, JST-CREST², KAST³)

4:30 PM - 4:45 PM

[18p-A11-12] Fabrication of SrVO₃ thin films on Si substrates by PLD

^○(M1)Ryo Inagaki¹, Yasushi Hotta¹, Shin-ichi Satoh¹ (Univ.of Hyogo¹)

Break 16:45～17:00 （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

[18p-A11-13] Synthesis and resistivity of Nb-doped TiO₂ films by atmospheric chemical vapor deposition technique

^○(M2)Nozomi Kobayashi¹, Tsuyoshi Kikuta¹, Keiji Komatsu¹, Shigeo Ohshio¹, Ikumi Toda¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

5:15 PM - 5:30 PM

[18p-A11-14] SnO₂ thin films prepared by coplanar type surface discharge technique

^○Syota Kanezashi¹, Yuki Masuda¹, Toshimichi Hanai¹, Masato Tan¹, Masayuki Okuya¹ (Shizuoka Univ.¹)

5:30 PM - 5:45 PM

[18p-A11-15] TiO₂ thin films prepared by surface discharge technique in air

Yuki Masuda¹, Masato Tan¹, ^○Syota Kanezashi¹, Masayuki Okuya¹ (Shizuoka Univ.¹)

5:45 PM - 6:00 PM

[18p-A11-16] Tin oxide films prepared by microwave heating

Takuya Ohashi¹, Sakae Muto¹, ^○Masayuki Okuya¹ (Shizuoka Univ.¹)

6:00 PM - 6:15 PM

[18p-A11-17] Development of a patterning method for solution-process oxide-gel by UV irradiation

^○Yuuki Yoshimoto¹, Koji Nagahara¹, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ERATO², GDRC³)

Poster presentation

[19a-PB2-1~11] 6.4 New thin-film materials

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB2 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB2会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PB2-1] Diamond Like Carbon Prepared on Silicon Substrate with Ti Buffer Layer

^○Satoru Kaneko^1,8, Takashi Matsunaga², Kaoru Ikenaga³, Takeshi Ito⁶, Manabu Yasui⁷, Takahiro Horiuchi¹, Shigeo Yasuhara⁴, Katsuhiro Mihirogi⁴, Masao Kumagai⁵, Hirofumi Takikawa⁹, Eiji Shimodaira⁵, Masazumi Kobayashi⁶, Rieko Sudo⁷, Akifumi Matsuda⁸, Mamoru Yoshimoto⁸ (Kanagawa Ind. Tech. Center¹, Tech. Res. Inst. Osaka², Jap. Electronics Tech.³, Jap. Adv. Chem.⁴, Fuji WPC⁵, KOBASEI⁶, SIC⁷, Tokyo Inst. of Tech.⁸, Toyohashi Uni. of Tech.⁹)

9:30 AM - 11:30 AM

▲ [19a-PB2-2] Development of nanosecond radiation thermometry for pulsed UV laser processing

^○Kentaro Shinoda¹, Tomohiko Nakajima¹, Tetsuo Tsuchiya¹ (AIST¹)

9:30 AM - 11:30 AM

[19a-PB2-3] Preparation of splash-reduced Silicon monoxide materials for vacuum evaporation.

^○Souichirou Ueshima¹, Takanori Watarai¹, Haruhiko Horie¹, Yukihiro Horie¹ (Canon Optron Inc.¹)

9:30 AM - 11:30 AM

[19a-PB2-4] Preparation of flexible phosphor thin film by photo reaction of chemical solution

Yoko Uzawa¹, Tomohiko Nakajima¹, kenntaro SHINODA¹, ^○Tetsuo Tsuchiya¹ (AIST¹)

9:30 AM - 11:30 AM

[19a-PB2-5] Chemical deposition of zirconium oxide films by using supercritical carbon dioxide fluid

^○Marina Shiokawa¹, Katsushi Izaki¹, Hiroshi Uchida¹ (Sophia Univ.¹)

9:30 AM - 11:30 AM

[19a-PB2-6] Temperature dependence of resistivity of MoSi₂-Si-Composite Thin Films

^○Ryosuke Kitani¹, Yuuki Sato¹, Shinzo Yoshikado¹ (Doshisha Univ.¹)

9:30 AM - 11:30 AM

[19a-PB2-7] Characteristics of Magnesium Phthalocyanine Films in Dilution Hydrogen Gas Atmosphere

^○Hidehiko Shimizu¹, Kazunari Shinbo¹, Haruo Iwano¹, Takahiro Kawakami¹, Yasuo Hukushima¹, Kotaro Nagata¹ (Niigata Univ.¹)

9:30 AM - 11:30 AM

△ [19a-PB2-8] Effect of a buffer layer on crystallization of PLD grown Ga₂O₃ thin films

^○Daiji Fukuda¹, Daishi Shiojiri¹, Ryosuke Yamauchi¹, Nobuo Tsuchimine², Masaya Oda³, Satoru Kaneko^4,1, Akihumi Matsuda¹, Mamoru Yoshimoto¹ (Tokyo Inst. of Tech.¹, TOSHIMA Manu. Co., Ltd.², ROCA Co., Ltd.³, Kanagawa Ind. Tech. Center⁴)

9:30 AM - 11:30 AM

[19a-PB2-9] Insulating and dielectric properties of individual Ti_0.87O₂^0.52− nanosheets

^○(PC)Daisuke Ogawa^1,2,3, Kosho Akatsuka^1,3, Tomoteru Fukumura^2,3, Minoru Osada^1,3, Takayoshi Sasaki^1,3, Tetsuya Hasegawa^2,3,4 (NIMS¹, The University of Tokyo², JST-CREST³, KAST⁴)

9:30 AM - 11:30 AM

[19a-PB2-10] Experimental Determination of Band Discontinuities at NiO/BDD Heterointerfaces Using Photoelectron Yield Spectroscopy for Transparent Devices

^○Daisuke Kawade^1,2, Keita Yajima¹, Takeshi Kondo^1,2, Tatsuo Aikawa^1,2, Makoto Yuasa^1,2, Mutsumi Sugiyama^1,2 (Faculty of Sci. & Tech., Tokyo Univ. of Science¹, RIST, Tokyo Univ. of Science²)

9:30 AM - 11:30 AM

[19a-PB2-11] A study on the preparation of tantalum- and tungsten-doped vanadium oxide films as a detector material for infrared sensors

Kazuhiro Saito¹, Ryoichi Watabe², Ryosuke Watanabe², ^○Yoji Saito^1,2 (Seikei University¹, Seikei University²)

Sessions

06. Thin Films and Surfaces » 6.4 New thin-film materials

[17p-A11-1~17] 6.4 New thin-film materials

[18a-A11-1~10] 6.4 New thin-film materials

△ [18a-A11-3] KBr(111) Crystal Growth via an Ionic Liquid Flux in a Vacuum

△ [18a-A11-4] Control of anion arrangement in perovskite oxynitirde SrTaO2N with epitaxial strain

△ [18a-A11-5] Characteristics of Carbon-doped InSiO channel material

△ [18a-A11-6] Nonmetal-metal transition in Li-inserted Cu3N

△ [18a-A11-7] Topotactic fluorination of Srn+1RunO3n+1 thin films by polyvinyliden fluoride

△ [18a-A11-8] Fabrication of aromatic polyurea films by vapor deposition polymerization into ionic liquids

△ [18a-A11-9] Fabrication of DBTTF-TCNQ complex with ionic liquid by vacuum deposition

△ [18a-A11-10] Observation of SiC Substrates / Flux Interface in the Flux Growth of SiC with High-Temperature and High-Vacuum Laser Microscope

[18p-A11-1~17] 6.4 New thin-film materials

▲ [18p-A11-1] 「Invited lecture of overseas researcher」（30min.）Tuning the magnetic properties of Co thin films by oxygen ion implantation

▼ [18p-A11-2] Electronic conductivity of impurity-doped Zn3N2 thin films

▼ [18p-A11-3] Effect of oxidation process on MoS2 thin film growth

▼ [18p-A11-4] Microfluidic control by temporally modulated thermoplasmonics

▲ [18p-A11-5] Impact of thermal expansion of substrates on phase transition temperature of VO2 films

▲ [18p-A11-6] Influence of nitrogen oxide gas supply during ZnO film growth using high-temperature H2O generated from a catalytic reaction

▲ [18p-A11-7] Preparation of a single-phase TaO2 thin film

[19a-PB2-1~11] 6.4 New thin-film materials

▲ [19a-PB2-2] Development of nanosecond radiation thermometry for pulsed UV laser processing

△ [19a-PB2-8] Effect of a buffer layer on crystallization of PLD grown Ga2O3 thin films

△ [18a-A11-4] Control of anion arrangement in perovskite oxynitirde SrTaO₂N with epitaxial strain

△ [18a-A11-6] Nonmetal-metal transition in Li-inserted Cu₃N

△ [18a-A11-7] Topotactic fluorination of Sr_n+1Ru_nO_3n+1 thin films by polyvinyliden fluoride

▲ [18p-A11-1] 「Invited lecture of overseas researcher」（30min.）
Tuning the magnetic properties of Co thin films by oxygen ion implantation

▼ [18p-A11-2] Electronic conductivity of impurity-doped Zn₃N₂ thin films

▼ [18p-A11-3] Effect of oxidation process on MoS₂ thin film growth

▲ [18p-A11-5] Impact of thermal expansion of substrates on phase transition temperature of VO₂ films

▲ [18p-A11-6] Influence of nitrogen oxide gas supply during ZnO film growth using high-temperature H₂O generated from a catalytic reaction

▲ [18p-A11-7] Preparation of a single-phase TaO₂ thin film

△ [19a-PB2-8] Effect of a buffer layer on crystallization of PLD grown Ga₂O₃ thin films