Poster presentation

[10p-PB4-1~23] 3.13 Semiconductor optical devices

Sun. Mar 10, 2019 4:00 PM - 6:00 PM PB4 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[10p-PB4-1] Composition Intermixing in InAs/GaAs Quantum Dot Structure

〇(M2)Tomohiro Shirai¹, Yu Hiraishi¹, Jinkwan Kwoen², Yuichi Matsushima¹, Hiroshi Ishikawa¹, Yasuhiko Arakawa², Katsuyuki Utaka¹ (1.Waseda Univ., 2.NanoQuine, Univ. of Tokyo)

4:00 PM - 6:00 PM

[10p-PB4-2] Tailoring of 1550nm-band InAs quantum dot intermixed regions by in-wafer adjustment of ion implantation depth

〇(M1)Syohei Isawa¹, Yota Akashi¹, Atsushi Matsumoto², Akanane Kouichi², Matsushima Yuichi³, Ishikawa Hiroshi¹, Utaka Katsuyuki¹ (1.Waseda Univ., 2.NICT, 3.GCS, Waseda Univ.)

4:00 PM - 6:00 PM

[10p-PB4-3] Analysis of dependence of SOA carrier recovery times on active layer structures

〇Ryota Suginaka¹, Yi He¹, Akira Yonekura¹, Yuichi Matsushima², Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.GCS, Waseda Univ.)

4:00 PM - 6:00 PM

[10p-PB4-4] Study on 2R all-optical regeneration technology based on nonlinear polarization rotation using MQW-SOA

〇(M2)Yi He¹, Ryota Suginaka¹, Yuichi Matsushima², Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.GCS, Waseda Univ.)

4:00 PM - 6:00 PM

[10p-PB4-5] X-ray diffraction of GaInAsP/GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Koki Tsushima¹, Hirokazu Sugiyama¹, Kazuki Uchida¹, Xu Han¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Masaki Matsuura¹, Takahiro Ishizaki¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

4:00 PM - 6:00 PM

[10p-PB4-6] Lasing characteristics of GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Takahiro Ishizaki¹, Hirokazu Sugiyama¹, Kazuki Uchida¹, Xu Han¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Masaki Matsuura¹, Koki Tsushima¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

4:00 PM - 6:00 PM

[10p-PB4-7] Current-injection lasing from a GaAs/AlGaAs coupled multilayer cavity fabricated by (113)B GaAs wafer bonding

〇Xiangmeng Lu¹, Kotaro Ogusu¹, Misa Takahashi¹, Tsuyoshi Goda¹, Naoto Kumagai², Ken Morita³, Yasuo Minami¹, Takahiro Kitada¹ (1.Tokushima Univ., 2.AIST, 3.Chiba Univ.)

4:00 PM - 6:00 PM

▲ [10p-PB4-8] Electro-thermally Wavelength Tunable VCSELs for 3D Imaging

〇(M2)JIALUN XU¹ (1.Tokyo Institute of Technology)

4:00 PM - 6:00 PM

[10p-PB4-9] High Speed Operation (> 10 GHz) of a Quantum Cascade Detector

〇Tatsuo Dougakiuchi¹, Akio Ito¹, Masahiro Hitaka¹, Kazuue Fujita¹, Tadataka Edamura¹ (1.HPK)

4:00 PM - 6:00 PM

[10p-PB4-10] Hybrid Integration of CMOS Operational Amplifier, Waveguide and Photodetector

〇Taichi Uruma¹, Tetsuo Tabei¹, Yoshiteru Amemiya¹, Tadashi Sato¹, Shinji Yamada¹, Kazushi Okada¹, Shin Yokoyama¹ (1.Res. Int. for Nanodevice and Bio Systems, Hiroshima Univ)

4:00 PM - 6:00 PM

[10p-PB4-11] Electric properties of Ga₂O₃/c-Se photodiode

〇Keitada Mineo¹, Shigeyuki Imura¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

4:00 PM - 6:00 PM

[10p-PB4-12] Fabrication of lowered low voltage LED via NiO: Li

〇Keita Shiraishi¹, Kensaku Yoda¹, Shuji Komuro², Xinwei Zhao¹ (1.Tokyo Univ. of Sci, 2.Toyo Univ.)

4:00 PM - 6:00 PM

[10p-PB4-13] Optical constant measurement of the porous silicon using imaging ellipsometry

〇Taiki Akiyama¹, Yuki Iizuka¹, Lianhua Jin¹, Eiichi Kondoh¹, Bernard Gelloz² (1.Yamanashi Univ, 2.Nagoya Univ)

4:00 PM - 6:00 PM

[10p-PB4-14] Comparison between Simulation and Experiment for Optical Response of Diarylethene

〇Keisuke Tanimoto¹, Satoru Kawamura¹, Yoshiteru Amemiya¹, Shin Yokoyama¹ (1.Res. Inst. for Nanodevice and Bio Syst. Hiroshima Univ.)

4:00 PM - 6:00 PM

[10p-PB4-15] Characterization of Dispersed Inorganic EL by Phosphor Layer Structural Change

〇Yuki Fukunari¹, KoKi Fuji¹, Kosuke Nakauchi¹, Koichi Wani¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-16] Luminance Characteristics by Structural change of the phosphor layer of Inorganic EL

〇Koki Fujii¹, Yuki Fukunari¹, Kosuke Nakauchi¹, Koichi Wani¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-17] Evaluation of luminescence characteristics dispersed inorganic EL composed BaTiO3:Yb/Er.

〇Kosuke Nakauchi¹, Yuki Fukunari¹, Koki Fujii¹, Koichi Wani¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-18] Emission characteristics of the Graphite carbon nitride film

〇Kousuke Sakaguchi¹, Kazuki Imai¹, Kohei Shimada¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-19] Luminescence characteristics by RF power effects on the structure of CN thin films

〇Kazuki Imai¹, Kohei Shimada¹, Kunio Itoh¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-20] Characterization of CN thin film using ZnO as an underlayer

〇Kohei Shimada¹, Kazuki Imai¹, Kunio Itoh¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-21] Evaluation and Emitting Luminescence Characterization of the Up-Conversion Phosphor using cerium

〇Tatsunari Nonoguchi¹, Tatsuya Ikeda¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-22] Enhanced luminescence of TiO₂ - ZnO : Yb₂O₃ - Er₂O₃ up-conversion phosphors

〇Tatsuya Ikeda¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

4:00 PM - 6:00 PM

[10p-PB4-23] Evaluation and characteristics of phosphorescent body SrAl₂O₄: Eu²⁺, Dy³⁺ in change of firing atmosphere

〇Ryoya Oto¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

Oral presentation

[11p-W611-1~12] 3.13 Semiconductor optical devices

Mon. Mar 11, 2019 1:45 PM - 5:00 PM W611 (W611)

Taro Arakawa(Yokohama National Univ.), Shiro Uchida(Chiba Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [11p-W611-1] Design and Measurement of Irradiation Characteristics of Fly-eye Lens for High Efficiency of Optical Wireless Power Transmission

〇Yuki Katsuta¹, Tomoyuki Miyamoto¹ (1.FIRST, Tokyo Tech)

2:00 PM - 2:15 PM

△ [11p-W611-2] Analysis of light irradiation characteristics in beam direction control of optical wireless power transmission (3)

〇(M2)Kazuhito Matsunaga¹, Tomoyuki Miyamoto¹ (1.FIRST,Tokyo Tech)

2:15 PM - 2:30 PM

△ [11p-W611-3] Investigation of position recognition method of solar cell using depth camera for optical wireless power transmission

〇Kenta Takahashi¹, Tomoyuki Miyamoto¹ (1.FIRST,Tokyo Tech)

2:30 PM - 2:45 PM

△ [11p-W611-4] Temperature Characteristics Analysis of Resistance and Efficiency of Semiconductor Lasers for Low Temperature Optical Wireless Power Transmission

〇(B)Hinata Kohara¹, Tomoyuki Miyamoto¹ (1.Tokyo Tech)

2:45 PM - 3:00 PM

▼ [11p-W611-5] LED-based above 200mW Optical Wireless Power Transmission for Compact IoT

〇(D)Yuhuan Zhou¹, Miyamoto Tomoyuki¹ (1.FIRST, IIR, Tokyo Institute of Technology)

3:00 PM - 3:15 PM

△ [11p-W611-6] Light Receiving Efficiency of Solar Cell considering influence of waves from Air to Underwater Optical Wireless Power Transmission

〇(M1)Jiaying Li¹, Tomoyuki Miyamoto¹ (1.FIRST, IIR, Tokyo Institute of Technology)

3:30 PM - 3:45 PM

▼ [11p-W611-7] Investigation of cover configuration of solar cells that enhances appearance of OWPT

〇Liu Yu¹, Miyamoto Tomoyuki¹ (1.Tokyo Tech)

3:45 PM - 4:00 PM

[11p-W611-8] Application of III-V compound semiconductor solar cell for high-efficiency optical wireless power transmission (6)

〇(B)Masaki Ito¹, Yuki Komuro¹, Naohiro Takahashi¹, Fumiaki Tanaka¹, Kouichi Akahane², Atsushi Matsumoto², Shulong Lu³, Shiro Uchida¹ (1.Chiba Inst., 2.NICT, 3.Suzhou Inst.)

4:00 PM - 4:15 PM

▼ [11p-W611-9] Carrier Transport Modeling in Multiple Quantum Well Based InGaP Solar Cells

〇(D)HsiangHung Huang¹, Kasidit Toprasertpong¹, Kentaroh Watanabe², Delamarre Amaury¹, Masakazu Sugiyama^1,2, Yoshiaki Nakano¹ (1.Univ. Tokyo, 2.RCAST)

4:15 PM - 4:30 PM

[11p-W611-10] Study on input taper for semiconductor membrane photodetector using photonic crystal

〇Koichi Saito¹, Amemiya Tomohiro^1,2, Xu Zheng¹, Nakamura Nagisa¹, Nishiyama Nobuhiko^1,2, Arai Shigehisa^1,2 (1.Tokyo Tech, 2.IIR)

4:30 PM - 4:45 PM

[11p-W611-11] Thermal noise suppression by high-impedance loaded nano-photodetector

〇Kengo Nozaki^1,2, Shinji Matsuo^1,3, Takuro Fujii^1,3, Koji Takeda^1,3, Akihiko Shinya^1,2, Masaya Notomi^1,2 (1.NTT NPC, 2.NTT BRL, 3.NTT DTL)

4:45 PM - 5:00 PM

▲ [11p-W611-12] Mid-infrared GeSn Resonant-cavity-enhanced GeSn Photodetectors

〇(M1)CHENG-HSUN TSAI¹, Bo-Jun Huang¹, Guo-En Chang¹ (1.Nat. Chung Cheng Univ.)

Oral presentation

[12a-W611-1~11] 3.13 Semiconductor optical devices

Tue. Mar 12, 2019 9:00 AM - 12:00 PM W611 (W611)

Takahiro Numai(Ritsumeikan Univ.), Kiichi Hamamoto(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-W611-1] Ridge LDs Carrying Transversal Diffraction Gratings with Composite Duty Ratios

〇(M1)Tetsuta Takamura¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

9:15 AM - 9:30 AM

[12a-W611-2] Enhancement of Front/Rear Facet Light Output Ratio
in a Resonance-Shifted DFB-LD with Sampled Gratings

〇(M1)Daisuke Ogata¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

9:30 AM - 9:45 AM

[12a-W611-3] Effect of Height/Depth of Regions between Mesa and Transversal Gratings in Ridge LDs with Transversal Gratings

〇(M1)Daichi Nagasawa¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

9:45 AM - 10:00 AM

[12a-W611-4] Influence of Corrugated Regions in Ridge LD with Transversal Gratings

〇Koki Taniguchi¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

10:00 AM - 10:15 AM

[12a-W611-5] Dependence of Laser Characteristics on Shape of Diffraction Grating in Resonance-Shifted DFB-LDs

〇Ichitaro Niko¹, Takahiro Numai¹ (1.Ritsumei Univ.)

10:30 AM - 10:45 AM

[12a-W611-6] Modal loss of micro-stadium cavities

〇Takehiro Fukushima¹, Fuki Nakahara¹ (1.Okayama Pref. Univ.)

10:45 AM - 11:00 AM

[12a-W611-7] Mode Crosstalk Suppression of Active-MMI Mode Selective Light Source with Slit Structure

〇(M2)Tomotaka Mori¹, Bingzhou Hong¹, Shingo Murakami¹, Haisong Jiang¹, Kiichi Hamamoto¹ (1.Kyushu Univ. ASEM)

11:00 AM - 11:15 AM

[12a-W611-8] Theoretical analysis of switchable all-optical inverter and flip-flop operations in semiconductor microring laser

〇Ryosuke Aoki¹, Taro Arakawa¹, Yasuo Kokubun² (1.Yokohama National Univ., 2.Chubu Univ.)

11:15 AM - 11:30 AM

[12a-W611-9] Differential resistance of membrane Distributed-Reflector lasers by GaInAsP/InP ridge-waveguide type buried heterostructure

〇Naoki Takahashi^1,2, Nagisa Nakamura^1,2, Takamasa Yoshida^1,2, Weicheng Fang^1,2, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.IIR)

11:30 AM - 11:45 AM

△ [12a-W611-10] Fabrication and lasing characteristics of 1.3-µm lateral-current-injection membrane lasers on SiC wafers

〇Suguru Yamaoka¹, Ryo Nakao¹, Takuro Fujii¹, Koji Takeda¹, Tatsurou Hiraki¹, Hidetaka Nishi¹, Takaaki Kakitsuka¹, Tai Tsuchizawa¹, Shinji Matsuo¹ (1.NTT Device Technology Labs.)

11:45 AM - 12:00 PM

[12a-W611-11] Tunable external cavity laser diode at 1.1-um-band based on emission-wavelength-controlled InAs quantum dots

〇Nobuhiko Ozaki^1,2, David Childs², Aleksandr Boldin², Daigo Ikuno¹, Katsuya Onoue¹, Hirotaka Ohsato³, Eiichiro Watanabe³, Naoki Ikeda³, Yoshimasa Sugimoto³, Richard Hogg² (1.Wakayama Univ., 2.Univ. Glasgow, 3.NIMS)

Oral presentation

[12p-W611-1~11] 3.13 Semiconductor optical devices

Tue. Mar 12, 2019 1:45 PM - 4:45 PM W611 (W611)

Tomohiro Amemiya(Tokyo Tech), Atsushi Matsumoto(NICT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[12p-W611-1] Realization of the I-VII group diode using the NaCl crystal

〇(M1)Shouhei You¹, Riki Terada¹, Tadasi Kawazoe¹, Takasi Tadokoro¹ (1.TDU)

2:00 PM - 2:15 PM

[12p-W611-2] Lateral coupling integration of VCSEL and VCSEL amplifier with cutoff structure

〇Masashi Takanohashi¹, Keisuke Shimura¹, Xiaddong Gu¹, Masanori Nakahama¹, Akihiro Matsutani², Takahiro Sakaguchi¹, Fumio Koyama¹ (1.Tokyo Tech. FIRST, 2.Tokyo Tech.Tech Dept)

2:15 PM - 2:30 PM

[12p-W611-3] Study on Beam Quality Improvement of high Power VCSEL Amplifier

〇Zeuku Ho¹, Keisuke Shimura¹, Xiaodong Gu¹, Akihiro Matsutani², Fumio Koyama¹ (1.Tokyo Tech. FIRST, 2.Tokyo Tech. Dept)

2:30 PM - 2:45 PM

[12p-W611-4] 【Highlight】Dot Projection based on VCSEL Amplifier for 3D Sensing

〇Mizuki Morinaga¹, Xiaodong Gu¹, Keisuke Shimura¹, Akihiro Matsutani², Fumio Koyama¹ (1.Tokyo Tech. FIRST, 2.Tokyo Tech. Tech Dept.)

2:45 PM - 3:00 PM

[12p-W611-5] Beam Scanner Integrated Single-mode VCSEL with Cut-off Wavelength Detuning

〇Keisuke Shimura¹, Zeuku Ho¹, Xiaodong Gu¹, Masanori Nakahama¹, Takahiro Sakaguchi¹, Akihiro Matsutani², Fumio Koyama¹ (1.Tokyo Tech, First, 2.Tokyo Tech, Semiconductor and MEMS Processing Division)

3:15 PM - 3:30 PM

[12p-W611-6] Preliminary Experiment on LiDAR system using VCSEL beam scanner

〇Ibuki Fujioka¹, Mizuki Morinaga¹, Ruixiao Li¹, Xiaodong GU¹, Koyama Fumio¹ (1.Tokyo Tech.)

3:30 PM - 3:45 PM

[12p-W611-7] Beam deflection characteristics of MEMS VCSEL integrated DBR waveguide scanner

〇Toshihiro Asahi¹, Xiaodong Gu¹, Takahiro Sakaguchi¹, Fumio Koyama¹ (1.FIRST, Tokyo Tech)

3:45 PM - 4:00 PM

[12p-W611-8] InP VCSEL Demultiplexer with Loss Compensation in Full C-band

〇(M2)Ryosuke Togashi¹, Xiaodong Gu¹, Akihiro Matsutani², Takahiro Sakaguchi¹, Fumio Koyama¹ (1.Tokyo Tech. FIRST., 2.Tokyo Tech. Technical Dept.)

4:00 PM - 4:15 PM

[12p-W611-9] Theoretical and Experimental Analysis on Ion-Implantation-Induced Quantum Dot Intermixing for 1550 nm-Band Photonic Integrated Circuits

〇Atsushi Matsumoto¹, Yota Akaishi², Shohei Isawa², Yuichi Matsushima², Katsuyuki Utaka² (1.NICT, 2.Waseda Univ.)

4:15 PM - 4:30 PM

[12p-W611-10] Study on Grating Coupler Formed on Si Slot Waveguide filled with Er_xY_2-xSiO₅

〇Masayuki Ozawa¹, Delgado Gabriel¹, Ghent Nakamura¹, Yasuhito Tanaka², Hideo Isshiki¹ (1.UEC, 2.SHINCRON)

4:30 PM - 4:45 PM

[12p-W611-11] Fundamental investigation of mode maintaining strongly coupled waveguide

〇(M2)Kantaro Fujimoto¹, Jiang Haisong¹, Hamamoto Kiichi¹ (1.Kyushu Univ. ASEM)

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[10p-PB4-1~23] 3.13 Semiconductor optical devices

▲ [10p-PB4-8] Electro-thermally Wavelength Tunable VCSELs for 3D Imaging

[11p-W611-1~12] 3.13 Semiconductor optical devices

△ [11p-W611-1] Design and Measurement of Irradiation Characteristics of Fly-eye Lens for High Efficiency of Optical Wireless Power Transmission

△ [11p-W611-2] Analysis of light irradiation characteristics in beam direction control of optical wireless power transmission (3)

△ [11p-W611-3] Investigation of position recognition method of solar cell using depth camera for optical wireless power transmission

△ [11p-W611-4] Temperature Characteristics Analysis of Resistance and Efficiency of Semiconductor Lasers for Low Temperature Optical Wireless Power Transmission

▼ [11p-W611-5] LED-based above 200mW Optical Wireless Power Transmission for Compact IoT

△ [11p-W611-6] Light Receiving Efficiency of Solar Cell considering influence of waves from Air to Underwater Optical Wireless Power Transmission

▼ [11p-W611-7] Investigation of cover configuration of solar cells that enhances appearance of OWPT

▼ [11p-W611-9] Carrier Transport Modeling in Multiple Quantum Well Based InGaP Solar Cells

▲ [11p-W611-12] Mid-infrared GeSn Resonant-cavity-enhanced GeSn Photodetectors

[12a-W611-1~11] 3.13 Semiconductor optical devices

△ [12a-W611-10] Fabrication and lasing characteristics of 1.3-µm lateral-current-injection membrane lasers on SiC wafers

[12p-W611-1~11] 3.13 Semiconductor optical devices

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