[K-6-5] High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si

M. Deura¹, Y. Kondo¹, M. Takenaka¹, S. Takagi¹, Y. Shimogaki¹, Y. Nakano¹, M. Sugiyama¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-6-6] Growth of InAs Quantum Dots with Various Charged States on a Wafer Utilizing Concentric Distribution

N. Kumagai¹, S. Ohkouchi¹, M. Shirane^1,2, Y. Igarashi^1,2, M. Nomura¹, Y. Ota¹, S. Yorozu^1,2, S. Iwamoto¹, Y. Arakawa¹ (1.Univ. of Tokyo, 2.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-7-1] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure

T. Yamaguchi¹, Y. Nanishi^1,2 (1.Ritsumeikan Univ., 2.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-7-2] Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Its Comparative Study with Photoluminescence Spectroscopy

H. Nakamoto¹, F. Ishikawa¹, M. Kondow¹, Y. Ohshima¹, A. Yabuchi¹, M. Mizuno¹, H. Araki¹, Y. Shirai² (1.Osaka Univ., 2.Kyoto Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-7-3] Nucleus and Spiral Growth of GaN Studied by Selective-Area Metalorganic Vapor Phase Epitaxy

T. Akasaka¹, Y. Kobayashi¹, M. Kasu¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-7-4] Enhanced optical characteristics of light-emitting-diode by localized surface plasmon of Ag/SiO₂ nanoparticles

L. W. Jang¹, T. Sahoo¹, D. S. Jo¹, J. W. Yoo¹, J. W. Jeon¹, S. M. Li², Y. H. Cho², I. H. Lee¹ (1.Chonbuk National Univ., 2.KAIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-8-1] Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition

M. Myronov¹, K. Sawano², D. R. Leadley¹, Y. Shiraki² (1.Univ. of Warwick , UK, 2.Tokyo City Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-8-2] Formation of Pyramidal-shaped Etch Pits on Germanium Surfaces Using Catalytic Reactions with Metallic Nanoparticles in Water

T. Kawase¹, K. Nishitani¹, K. Dei¹, J. Uchikoshi¹, M. Morita¹, K. Arima¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-8-3] Fabrication of defect-free and relaxed Ge-rich SGOI-wire structures for CMOS applications

M. Oda¹, Y. Moriyama¹, K. Ideda¹, Y. Kamimuta¹, T. Tezuka¹ (1.MIRAI-TOSHIBA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-8-4] Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135^oC

G. Nakagawa¹, N. Kawamoto², T. Imamura³, Y. Tomizawa³, T. Miyoshi², K. Tadatomo², T. Asano¹ (1.Kyushu Univ., 2.Yamaguchi Univ., 3.TEIJIN Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (401 - 410)

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