[H-1-1] Let us update the present status of research on magnetic semiconductors

H. Munekata¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-1-2] In situ Observation of Fe growth on GaAs(001) and InAs(001) by X-ray diffraction

S. Fujikawa¹, M. Takahasi¹ (1.JAEA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-1-3] Luminescence Characteristics and Annealing Effect of Tb-doped AlBNO Films for Inorganic Electroluminescence Devices

K. Masumoto¹, A. Semba¹, C. Kimura¹, T. Taniguchi², K. Watanabe², H. Aoki¹ (1.Osaka Univ., 2.National Inst. for Materials Sci. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-1-4] Influence of Nitrogen Doping on the LaAlO Film Properties

M. Honjo¹, N. Komatsu¹, C. Kimura¹, H. Aoki¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-2-1] Towards Industrial Applications of Graphene Electrodes

B. H. Hong¹ (1.Sungkyunkwan Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-2-2] Uniformity of Graphene CVD Growth Depending on the Thickness and Domain Structure of Epitaxial Metal Films

S. Yoshii¹, K. Nozawa¹, K. Toyoda¹, N. Matsukawa¹ (1.Panasonic Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-2-3] Synthesis of High Quality Graphene Using Diamond-Like Carbon (DLC) as Solid Carbon Source

B. Liu¹, G. Han¹, M. C. Yang², Q. Zhou¹, S. M. Koh¹, Y. C. Yeo¹ (1.National University of Singapore, 2.Data Storage Institute , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-2-4] TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)

H. Handa¹, R. Takahashi¹, S. Abe¹, K. Imaizumi¹, M. H. Jung¹, S. Ito¹, H. Fukidome¹, M. Suemitsu^1,2 (1.Tohoku Univ., 2.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-3-1] Crack-Free Epitaxial ZnO film on Si(111) with Gd₂O₃(Ga₂O₃) buffer layer

B. H. Lin^1,2, W. R. Liu^1,2, C. C. Kuo¹, C. H. Hsu^2,1, W. F. Hsieh^1,3, M. Hong⁴, J. Kwo⁴ (1.National Chiao Tung Univ., 2.National Synchrotron Radiation Research Center, 3.National Cheng Kung Univ., 4.National Tsing Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-3-2] Optical properties of ZnO/Au core/shell nano-tips

Y. H. Ko¹, J. S. Yu¹ (1.Kyung Hee Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (271 - 280)

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