[P-1-6] Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition

K. Furuta¹, W. Takeuchi¹, M. Sakashita¹, K. Kato¹, H. Kondo¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-7] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy

M. Adachi¹, M. Sakashita¹, H. Kondo¹, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-8] In-situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm EOT Utilizing ECR Sputtering on Three-Dimensional Si Structures

T. Sano¹, S. Ohmi¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-9] The Influence of La and Zr Doping on TDDB Characteristics of HfO₂ Thin Films

H. W. Chen¹, C. H. Liu², S. Y. Chen¹, Y. W. Liao¹, H. W. Hsu¹, H. S. Huang¹, L. W. Cheng³ (1.National Taipei Univ. of Tech., 2.National Taiwan Normal Univ., 3.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-10] Temperature Dependence of Exclusive SiO₂Formation during Thermal Oxidation of Si_1-X Ge_X Alloy Layer on Si(001) Surfaces

H. Hozumi¹, S. Ogawa¹, A. Yoshigoe², S. Ishidzuka³, J. R. Harries², Y. Teraoka², Y. Takakuwa¹ (1.Tohoku Univ., 2.JAEA, 3.Akita Nat. Col. Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-11] Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO₂/GeO₂ Bi-Layer Passivation

K. Hirayama¹, R. Ueno¹, Y. Iwamura¹, K. Yoshino¹, D. Wang¹, H. Yang¹, H. Nakashima¹ (1.Kyushu Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-12] Improvement of The Property of FET Having The HfO₂/Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment

D. Lee¹, H. Imajo¹, T. Kanashima¹, M. Okuyama¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-13] Study on Native Oxidation of Ge (111) and (100) Surfaces

S. K. Sahari¹, H. Murakami¹, T. Fujioka¹, T. Bando¹, A. Ohta¹, K. Makihara¹, S. Higashi¹, S. Miyazaki¹ (1.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-14] Annealing Effects on Ge/SiO₂ interface Structure in wafer-bonded germanium-on-insulator substrates

O. Yoshitake¹, J. Kikkawa¹, Y. Nakamura¹, A. Sakai¹, E. Toyoda², H. Isogai², K. Izunome² (1.Osaka Univ., 2.Covalent Silicon Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-15] Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Y. Iwasaki¹, Y. Nakamura¹, J. Kikkawa¹, A. Sakai¹, M. Sato², E. Toyoda², H. Isogai², K. Izunome² (1.Osaka Univ., 2.Covalent Silicon Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (431 - 440)

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