[A-7-3] Bias-temperature-instability and thermal anneal effects of organic thin-film transistors

P. H. Chen¹, P. Y. Lo^1,2, T. S. Hu², P. W. Li¹ (1.National Central Univ., 2.Indus. Tech. Res. Inst. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] Transport Mechanism at the First-layered Pentacene Grains and Grain Boundaries

Y. Hu^1,2, L. Wang¹, Q. Qi¹, C. Jiang¹ (1.National Center for Nanoscience and Tech., 2.Chinese Academy of Sci. , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Materials and Processes for Air-Stable n-Channel Organic Transistors

J. H. Oh^1,2, Z. Bao¹ (1.Stanford Univ. , USA, 2.UNIST , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-8-2] 3 V-driven flexible organic transistors with mobility exceeding 2 cm²/Vs

K. Fukuda¹, N. Uchiyama¹, T. Sekitani¹, U. Zschieschang², H. Klauk², T. Yamamoto³, K. Takimiya³, T. Someya¹ (1.Univ. of Tokyo , Japan, 2.Max Planck Inst. , Germany, 3.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] Different interfacial carrier behaviors between α-NPD and pentacene double-layer device with a polyimide blocking-layer by time-resolved optical second harmonic generation

L. Zhang¹, D. Taguchi¹, J. Li¹, T. Manaka¹, M. Iwamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] Megahertz Operation of Rectifier Circuits using Pentacene Thin-Film Transistors

M. Kitamura¹, Y. Arakawa¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-8-5] Realization of Pentacene-based Thin Film Transistor Arrays for Large-area Organic Electronics Being Compatible with the Roll-to-Roll Manufacturing Technique

L. Wang^1,2, D. Li¹, C. Jiang¹ (1.National Center for Nanoscience and Tech., 2.Chinese Academy of Sci. , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator

M. Liao¹, Y. U. Song¹, J. Ishikawa¹, T. Sano¹, J. Gao¹, H. Ishiwara¹, S. Ohmi¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT

K. Kuribara¹, T. Nakagawa¹, K. Fukuda¹, T. Yokota¹, T. Sekitani¹, U. Zschieschang², H. Klauk², T. Someya¹, T. Yamamoto³, K. Takimiya³ (1.Univ. of Tokyo , Japan, 2.Max Planck Inst for Solid State Res. , Germany, 3.Hiroshima Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] Direct observation of carrier behavior leading to electroluminescence in tetracene field-effect transistor

Y. Ohshima¹, H. Satou¹, T. Manaka¹, H. Kohn¹, N. Hirako¹, M. Iwamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (31 - 40)

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