[C-7-1] Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication

T. Kamei¹, Y. X. Liu², K. Endo², S. O'uchi², J. Tsukada², H. Yamauchi², Y. Ishikawa², T. Hayashida¹, T. Matsukawa², K. Sakamoto², A. Ogura¹, M. Masahara² (1.Meiji Univ., 2.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] High-k Metal Gate FinFET SRAM Cell Optimization Considering Variability due to NBTI/PBTI and Surface Orientation

V. P. H. Hu¹, M. L. Fan¹, C. Y. Hsieh¹, P. Su¹, C. T. Chuang¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

T. Izumida¹, K. Okano¹, T. Kanemura¹, M. Kondo¹, S. Inaba¹, S. Itoh¹, N. Aoki¹, Y. Toyoshima¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4] FinFETs Junctions Optimization by Conventional Ion Implantation for (Sub-)22nm Technology Nodes Circuit Applications

A. Veloso¹, A. De Keersgieter¹, S. Brus¹, N. Horiguchi¹, P. P. Absil¹, T. Hoffmann¹ (1.IMEC , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Using Power Transform to Study DC and AC CHC Effects on nMOSFETs in 65 nm Technology

S. Y. Chen¹, C. H. Tu¹, M. X. Wu¹, H. S. Huang¹, Z. W. Jhou², S. Chou², J. Ko² (1.National Taipei Univ. of Tech., 2.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Effect of Hot-Carrier Stress on the Recoverable and Permanent Components of Negative-Bias Temperature Instability

T. J. J. Ho¹, D. S. Ang¹, C. M. Ng² (1.Nanyang Tech. Univ., 2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-8-3] Effect of Positive Gate Stressing on the Recoverable Component of Negative-Bias Temperature Instability

A. A. Boo¹, D. S. Ang¹, Z. Q. Teo¹, C. M. Ng² (1.Nanyang Tech. Univ., 2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-8-4] Investigation of Recovery Effects on Degraded pMOSFETs of 65 nm Technology with Different Annealing Temperatures

S. Y. Chen¹, C. H. Tu¹, Y. F. Chen¹, H. S. Huang¹, Z. W. Jhou², S. Chou², J. Ko² (1.National Taipei Univ. of Tech., 2.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-8-5] Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications

G. Bersuker¹, D. Heh¹, J. Huang¹, C. S. Park¹, A. Padovani², L. Larcher², P. D. Kirsch¹, R. Jammy¹ (1.SEMATECH , USA, 2.Università di Modena e Reggio Emilia , Italy)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] CVD Graphene for High Speed Electronics

B. C. Huang¹, C. Q. Miao¹, Y. Wang¹, Y. H. Xie¹, J. C. S. Woo¹ (1.UCLA , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (101 - 110)

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