[P-5-15L] Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Widely Tuning Range in 0.18µm CMOS

Y. S. Tiao¹, M. L. Sheu¹, L. J. Tsao¹ (1.National Chi-Nan Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-1] Characterization of SiGe Thin Films Deposited by RF Magnetron Sputtering for Infrared Imaging Sensor

K. Yamaki¹, S. Sekino², T. Tai¹, S. Nakamura², T. Yoshitake², A. Furukawa¹ (1.Tokyo Univ. of Sci., 2.NEC Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-2] Low Gate Leakage Current InAlAs/InGaAs Metamorphic HEMTs Using HBr + UV Illumination Gate Treatment Technology

C. H. Chen¹, C. W. Yang¹, C. K. Lin¹, H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-3] The low frequency noise analysis in bottom-gated ZnO Thin film Transistors with different active layer thickness

K. S. Jeong¹, Y. S. Kim², J. G. Park¹, S. D. Yang¹, Y. M. Kim¹, H. J. Yun¹, H. D. Lee¹, G. W. Lee¹ (1.Chungnam National Univ., 2.National NanoFab Center , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-5] Short Channel Effect of Indium-Gallium-Zinc-Oxide Thin Film Transistors

S. H. Kuk¹, D. W. Kang¹, J. S. Lee¹, S. J. Kim¹, J. Y. Kwon¹, M. K. Han¹ (1.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-6] Physics-Based Modeling and Analysis of Compound Semiconductor Devices and Circuits in Extreme Environments

M. Turowski¹, A. Raman¹, A. Fedoseyev¹ (1.CFD Research Corp. (CFDRC) , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-7] Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs

C. W. Lin¹, C. K. Lin¹, H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-8] 10-Gb/s InGaAs P-I-N photodetector with planar buried heterostructure

Y. S. Wang^1,3, S. J. Chang¹, Y. Z. Chiou², S. P. Chang¹, Y. H. Wu³, R. T. Hsu³, W. Lin³ (1.National Cheng Kung Univ., 2.Southern Taiwan University, 3.LandMark Optoelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-9] Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation

S. Liu¹, J. Wang¹, R. Gong¹, Z. Dong¹, M. Yu¹, C. P. Wen¹, C. Zeng², Y. Cai², B. Zhang² (1.Peking Univ., 2.Suzhou Inst. of Nano-tech and Nano-bionics , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-6-10] Current stress instability analysis of amorphous InGaZnO thin film transistors

J. H. Kang¹, E. N. Cho¹, I. Yun¹ (1.Yonsei Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (511 - 520)

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