[B-2-4] GeO Desorption Mechanism from GeO₂/Ge Stack Determined by ⁷³Ge Labeling Technique in Thermal Desorption Spectroscopy (TDS) Analysis

S. K. Wang¹, K. Kita^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks

J. Robertson¹, L. Lin¹ (1.Cambridge Univ. , UK)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Oxygen vacancy mobility and diffusion coefficient determined from current measurements in SiO₂/HfO₂/TiN stacks

S. Zafar¹, H. Jagannathan¹, L. F. Edge¹, D. Gupta¹ (1.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Fermi-level Pinning and NBTI Free of CMOS HfO₂ By Pre-CF₄ Plasma Passivation

H. H. Chiu¹, C. S. Lai¹, J. C. Wang¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-3-4] Enhanced Electrical Uniformity and Breakdown of Multi-Step Deposited and Annealed HfSiO-Insight by Scanning Tunneling Microscopy

K. S. Yew¹, D. S. Ang¹, K. L. Pey¹, G. Bersuker², P. S. Lysaght², D. Heh² (1.Nanyang Tech. Univ. , Singapore, 2.SEMATECH , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] High-k/Metal Gate Technology toward 14nm generation

M. Takayanagi¹ (1.Toshiba America Electronic Components, Inc. , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

T. Yamaguchi¹, Y. Kawasaki¹, T. Yamashita¹, N. Miura¹, M. Mizuo¹, J. Tsuchimoto¹, K. Eikyu¹, K. Maekawa¹, M. Fujisawa¹, K. Asai¹ (1.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application

C. S. Park¹, G. Bersuker¹, T. Ngai¹, J. Huang¹, K. H. Lin², J. Barnett¹, J. Price¹, K. Rader¹, P. Lysaght¹, B. Taylor¹, P. D. Kirsch¹, R. Jammy¹ (1.SEMATECH , USA, 2.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Asymmetric Gate-oxide Thickness Four-terminal FinFETs Fabricated using Low-Temperature and Atomically Flat interface Neutral-Beam Oxidation Process

A. Wada¹, K. Endo², M. Masahara², S. Samukawa¹ (1.Tohoku Univ., 2.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO₂/Si MOSFETs

N. Miyata¹, H. Ishii¹, T. Itatani¹, T. Yasuda¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (51 - 60)

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