[C-9-2] High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization

J. Mitard¹, B. De Jaeger¹, G. Eneman^2,3, A. Dobbie⁴, M. Myronov⁴, M. Kobayashi⁵, J. Geypen¹, H. Bender¹, B. Vincent¹, R. Krom², J. Franco², G. Winderickx¹, E. Vrancken¹, W. Vanherle¹, W. E. Wang¹, J. Tseng⁶, R. Loo¹, K. De Meyer², M. Caymax¹, L. Pantisano¹, D. R. Leadley⁴, M. Meuris¹, P. P. Absil¹, S. Biesemans¹, T. Hoffmann¹ (1.IMEC, 2.K. U Leuven, 3.FWO , Belgium, 4.Univ. of Warwick , UK, 5.Stanford Univ. , USA, 6.TSMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] Ge FETs Gate Stack Passivation Options and their Scalability to low EOT

F. Bellenger^1,2, B. De Jaeger¹, L. Nyns¹, M. Zahid¹, M. Houssa², E. Vrancken¹, J. Tseng³, M. Caymax¹, M. Meuris¹, K. De Meyer^1,2, M. Heyns^1,2, T. Hoffmann¹ (1.IMEC, 2.KULeuven , Belgium, 3.TSMC , Taiwan)

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[C-9-4] Analysis of the Junctionless Transistor Architecture

J. P. Colinge¹, J. P. Raskin², A. Kranti¹, I. Ferain¹, C. W. Lee¹, N. Dehdashti Akhavan¹, P. Razavi¹, R. Yan¹, R. Yu¹ (1.Univ. College Cork , Ireland, 2.Université catholique de Louvain , Belgium)

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[C-9-5L] Short-Channel Junctionless Nanowire Transistors

C. W. Lee¹, I. Ferain¹, A. Kranti¹, N. Dehdashti Akhavan¹, P. Razavi¹, R. Yan¹, R. Yu¹, B. O'Neill¹, A. Blake¹, M. White¹, A. M. Kelleher¹, B. McCarthy¹, S. Gheorghe¹, R. Murphy¹, J. P. Colinge¹ (1.Univ. College Cork , Irel)

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[D-1-1] Roadmap of ultrafast energy-saving optical semiconductor devices to Year 2025

Y. Ueno¹ (1.Univ. of Electro-Communications , Japan)

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[D-1-2] Quasi-Phase-Matched Difference Frequency Generation at 3.4 μm in High-Quality GaAs/AlGaAs Waveguides

K. Hanashima¹, I. Ohta¹, J. Ota¹, T. Matsushita¹, T. Kondo¹ (1.Univ. of Tokyo , Japan)

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[D-1-3] Experimental Observation of Self-Phase Modulation in ZnO Channel Waveguides

E. Y. Morales Teraoka¹, D. H. Broaddus², T. Kita¹, A. Tsukazaki^1,3, M. Kawasaki^1,3,4, A. L. Gaeta², H. Yamada¹ (1.Tohoku Univ. , Japan, 2.Cornell Univ. , USA, 3.PRESTO, Japan Science and Technology Agency, 4.WPI Advanced Institute for Materials Research, 5.CRESTO, Japan Science and Technology Agency , Japan)

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[D-1-4] Remarkable Enhancement of Optical Kerr Signal by increasing Quality Factor in a GaAs/AlAs Multilayer Cavity

K. Morita¹, T. Takahashi¹, T. Kitada¹, T. Isu¹ (1.Univ. of Tokushima , Japan)

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[D-2-1] Time-Resolved Measurements on Sum Frequency Generation Strongly Enhanced in (113)B GaAs/AlAs Coupled Multilayer Cavity

F. Tanaka¹, T. Takimoto¹, K. Morita¹, T. Kitada¹, T. Isu¹ (1.Univ. of Tokushima , Japan)

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[D-2-2] Development of half-cladding semiconductor photonic device structure for surface transmission of light waves

N. Yamamoto¹, D. Murakami², H. Fujioka², K. Akahane¹, T. Kawanishi¹, H. Sotobayashi³, H. Takai² (1.NICT, 2.Tokyo Denki Univ., 3.Aoyama Gakuin Univ. , Japan)

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