[P-2-10] In Situ High-Resolution Transmission Electron Microscopy of Electromigration in Silver Nanocontacts

H. Masuda¹, T. Kizuka¹ (1.Univ. of Tsukuba , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-1] Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors (MBCFETs)

Y. C. Jung¹, B. H. Hong¹, L. Choi¹, S. W. Hwang¹, K. H. Cho², S. Y. Lee², D. W. Kim², G. Y. Jin², K. S. Oh² (1.Korea Univ., 2.Samsung Electronics Co., Ltd. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-2] The Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator (SOI) FinFETs by Quantum Transport Analysis

K. M. Liu¹ (1.National Dong Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-3] Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations

E. M. Bazizi^1,2, P. F. Fazzini¹, F. Cristiano¹, A. Pakfar², C. Tavernier², C. Zechner³, N. Zographos³, A. Claverie¹ (1.CNRS-LAAS, 2.STMicroelectronics , France, 3.Synopsys Switzerland LLC LEMES/CNRS , Switzerl)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-4] Source/Drain Doping Induced V_th Variation in Nano-scale UTB SOI MOSFET

L. Du¹, S. Zhang¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-5] The Observation of the Random Dopant Fluctuation in Strained-SOI Devices

C. Y. Cheng¹, E. R. Hsieh¹, S. S. Chung¹, R. M. Huang², Y. H. Lin², C. T. Tsai², G. H. Ma², C. W. Liang² (1.National Chiao Tung Univ., 2.UMC , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al₂O₃ Gate Stacks

S. Lee¹, R. Iida¹, S. H. Kim¹, M. Yokoyama¹, N. Taoka¹, Y. Urabe², T. Yasuda², H. Takagi², H. Ishii², N. Miyata², H. Yamada³, N. Fukuhara³, M. Hata³, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.NAIST, 3.Sumitomo Chemical Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-9] Characterization of Tunneling Resistance in Vertical Tunneling FETs

A. Tura¹, J. C. S. Woo¹ (1.Univ. of California, Los Angeles , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-10] Improvement of High-k/metal gate pMOSFET performances and reliability with optimism Si cap/SiGe channel structure

C. W. Hsu¹, Y. K. Fang¹, C. Y. Chen¹, W. K. Yeh², C. T. Lin³, P. Y. Chen⁴ (1.National Cheng Kung Univ., 2.National Univ. of Kaohsiung, 3.UMC, 4.I-Shou Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-11] Electrically Detected Magnetic Resonance Study of Interfacial Traps in a Nitrided Submicron Metal-Oxide-Semiconductor Field Effect Transistor

Y. Yonamoto¹, N. Akamatsu¹ (1.Hitachi, Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (461 - 470)

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