[E-3-5] Dynamics of the Charge Centroid in MONOS Memory Cells during Avalanche Injection and FN Injection Based on Incremental-Step-Pulse-Programming

J. Fujiki¹, T. Haimoto¹, N. Yasuda¹, M. Koyama¹ (1.TOSHIBA Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1] Y-disturb Study of Charge-trapping Type Non-volatile Memory Cell for 45nm Generation Node

T. F. Ou¹, C. H. Cheng¹, W. C. Tzeng¹, G. D. Lee¹, S. H. Ku¹, C. H. Liu¹, K. W. Liu¹, N. K. Zous¹, W. J. Tsai¹, S. W. Huang¹, M. S. Chen¹, W. P. Lu¹, K. C. Chen¹, C. Y. Lu¹ (1.Macronix Int'l Co., Ltd. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al₂O₃ in a Charge-Trap Type Flash Memory Device

J. K. Park¹, Y. Park¹, S. K. Lim², J. S. Oh², M. S. Joo³, K. Hong³, B. J. Cho¹ (1.KAIST, 2.National NanoFab Center, 3.Hynix Semiconductor Inc. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] POST-BREAKDOWN RECOVERABLE METAL NANOCRYSTAL-BASED AL₂O₃/SIO₂GATE STACK FOR NON-VOLATILE MEMORY

Y. N. Chen^1,2, K. L. Pey¹, K. E. J. Goh², Z. Z. Lwin¹, P. K. Singh³, S. Mahapatra³, Q. X. Wang⁴, J. Zhu⁴ (1.Nanyang Tech. Univ., 2.Inst. of Material Res. and Eng.,A*STAR , Singapore, 3.Indian Inst. of Tech. , India, 4.GlobalFoundries Singapore Pte. Ltd , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-5-1] Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory Device

W. Kim¹, D. W. Kwon¹, J. H. Ji¹, J. H. Lee¹, B. G. Park¹ (1.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-5-2] Band Energy Engineered Metal Nanodots Nonvolatile Memory to Achieve Long Retention Characteristics

T. Hiraki¹, Y. Pei¹, T. Kojima¹, J. C. Bea¹, H. Kino¹, M. Koyanagi¹, T. Tanaka¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-6-1] Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology

K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-6-2] Current Development Status and Future Challenges of FeRAM

Y. Fujimori¹, H. Kimura¹, Y. Ichida¹, J. Iida¹, K. Ashikaga¹, H. Ito¹, T. Ozawa¹, T. Kanaya¹, N. Kinouchi¹, T. Suzuki¹, T. Date¹, D. Notsu¹, T. Fuchikami¹, Z. Zhiyong¹, M. Kojima¹, M. Moriwake¹, H. Takasu¹ (1.ROHM Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] Synthesis of pure phase BiFeO3 films grown on Iridium electrode by MOCVD for ferroelectric memories

Y. Kumura^1,2, S. Y. Yang², P. Yu², J. X. Zhang², J. Seidel², A. I. Khan², R. Ramesh² (1.Toshiba Corp. , Japan, 2.Univ. of California Berkeley , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4L] Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

T. Miyasako¹, B. N. Q. Trinh¹, T. Kaneda¹, M. Onoue¹, P. T. Tue³, E. Tokumitsu^1,2, T. Shimoda^1,3 (1.JST, 2.Tokyo Tech, 3.JAIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (171 - 180)

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