[I-4-4L] Behavior of in-grown Stacking Faults in 4H-SiC Epitaxial Layer Through Annealing Process

R. Hattori¹, K. Hamano¹, J. Moritani¹, K. Sato¹, T. Oomori¹ (1.Mitsubishi Electric Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-5-1] High-Mobility a-IGZO Thin-Film Transistor Using Ta₂O₅ Gate Dielectric

C. J. Chiu¹, S. P. Chang¹, C. Y. Lu¹, S. J. Chang¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-5-2] ZnO thin film fabricated by plasma assisted atomic layer deposition

Y. Kawamura¹, Y. Uraoka^1,2 (1.NAIST, 2.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-5-3] The Unique Phenomenon in the Amorphous In₂O₃-Ga₂O₃-ZnO TFTs Degradation under the Dynamic Stress

M. Fujii¹, J. S. Jung², J. Y. Kwon², Y. Uraoka^1,3 (1.NAIST , Japan, 2.Samsung Advanced Inst. of Tech. , Korea, 3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-5-4] Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)

S. H. Choi¹, Y. W. Lee¹, J. Y. Kwon¹, M. K. Han¹ (1.Seoul National Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-6-1] GaN on Si Based Power Devices:A New Era in Power Electronics

M. A. Briere¹ (1.ACOO Enterprises LLC Under contract with International Rectifier , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-6-2] Thermally Stable Isolation of AlGaN/GaN Transistors by Using Fe Ion Implantation

H. Umeda¹, T. Takizawa¹, Y. Anda¹, T. Ueda¹, T. Tanaka¹ (1.Panasonic Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-6-3] AlGaN/GaN MOS-HEMT Single-Chip DC/DC Boost Converter Using High-k Gd₂O₃ Insulator

C. W. Yang¹, S. W. Peng¹, C. K. Lin¹, H. C. Chiu¹ (1.Chang Gung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-6-4] Reduction of current collapse in AlGaN/GaN HEMTs using thick GaN cap layer

H. Chonan¹, Y. Sakamura², G. Piao², T. Ide², M. Shimizu², Y. Yano³, H. Nakanishi¹ (1.Tokyo Univ. of Sci., 2.AIST, 3.Taiyo Nippon Sanso Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-6-5] Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation

G. H. Wang¹, T. Sudhiranjan¹, X. Wang², H. Y. Zheng², T. K. Chan³, T. Osipowicz³, Y. L. Foo¹ (1.Inst. of Materials Res. And Eng., 2.Singapore Inst. Of Manufacturing Tech., 3.National Univ. of Singapore , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (321 - 330)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Next »

▲