[C-4-4L] Qualitative Differences Between Conduction Band Edge Excitonic States and Electron Tapping in (i) SiO₂ and (ii) Si₃N₄ and Si Oxynitride Alloy Films

G. Lucovsky¹ (1.NC State Univ , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Fully Quantum Study of Silicon Devices with Scattering Based on Wigner Monte Carlo Approach

S. Koba¹, R. Aoyagi¹, H. Tsuchiya¹ (1.Kobe Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J. L. Huguenin^1,2, S. Monfray¹, G. Bidal¹, S. Denorme¹, P. Perreau^3,1, N. Loubet¹, Y. Campidelli¹, M. P. Samson^3,1, C. Arvet^3,1, K. Benotmane³, F. Leverd¹, P. Gouraud¹, B. Le-Gratiet¹, C. De-Butet^3,1, L. Pinzelli¹, R. Beneyton¹, S. Barnola³, T. Morel¹, A. Halimaoui¹, F. Boeuf¹, G. Ghibaudo², T. Skotnicki¹ (1.STMicroelectronics, 2.IMEP, 3.CEA-LETI , France)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

Y. Nakabayashi¹, M. Saitoh¹, T. Ishihara¹, T. Numata¹, K. Uchida², J. Koga¹ (1.Toshiba Corp., 2.Tokyo Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] Low GIDL and Its Physical Origins in Si Nanowire Transistors

K. Zaitsu¹, M. Saitoh¹, Y. Nakabayashi¹, T. Ishihara¹, T. Numata¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

A. Khakifirooz¹, K. Cheng¹, A. Kumar¹, P. Kulkarni¹, S. Ponoth¹, B. S. Haran¹, S. Mehta¹, J. Cai¹, A. Byrant¹, J. Kuss¹, L. F. Edge¹, H. Jagannathan¹, Z. Ren¹, A. Reznicek¹, T. Adam¹, H. He¹, A. Kimball¹, S. Kanakasabapathy¹, S. Schmiz¹, S. Holmes¹, A. Majumdar¹, B. Jagannathan¹, D. Yang¹, A. Upham¹, S. C. Seo¹, J. L. Herman¹, R. Johnson¹, Y. Zhu¹, P. Jamison¹, Z. Zhu¹, L. H. Vanamurth¹, J. Faltermeier¹, S. Fan¹, D. Horak¹, T. Hook¹, V. Narayanan¹, V. Paruchuri¹, H. Bu¹, D. K. Sadana¹, P. Kozlowsk¹, B. Doris¹, D. McHerron¹, W. Haensch¹, M. Khare¹, E. Leobondung¹, J. O'Neil¹, G. Shahidi¹ (1.IBM Research , USA)

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[C-6-2] Variability in Variable-Body-Factor Silicon-on-Thin-Box MOSFETs (SOTBMOSFETs)

Y. Yang¹, G. Du¹, R. Han¹, X. Liu¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts

A. Toda¹, K. Ohyama¹, N. Higashiguchi¹, D. Hori¹, M. Miyake¹, S. Amakawa¹, J. Ida², M. Miura-Mattausch¹ (1.Hiroshima Univ., 2.Kanazawa Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

C. Xu¹, P. Batude¹, C. Rauer¹, C. Le Royer¹, L. Hutin¹, A. Pouydebasque¹, C. Tabone¹, B. Previtali¹, O. Faynot¹, M. Mouis², V. Vinet¹ (1.CEA-LETI/MINATEC, 2.IMEP , France)

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[C-6-5L] Cost Efficient Novel High Performance Analog Devices Integrated with Advanced HKMG Scheme for 28nm CMOS Technology and Beyond

J. P. Han¹, T. Shimizu², L. H. Pan³, M. Voelker¹, C. Bernicot⁴, F. Arnaud⁴, A. C. Mocuta³, K. Stahrenberg¹, A. Azuma⁵, G. Yang⁶, M. Eller¹, D. Jaeger³, H. Zhuang¹, K. Miyashita⁵, K. Stein³, D. R. Nair³, J. H. Park⁷, M. Hamaguchi⁵, S. Kohler⁴, D. Chanemougame⁴, W. Li³, K. Kim¹, N. Kim⁶, C. Wiedholz¹, S. Miyake², G. Tsutsui², H. van Meer⁶, J. Liang¹, M. Ostermayr¹, J. Lian¹, M. Celik⁴, R. Donaton³, K. Barla⁴, M. H. Na³, Y. Goto², M. Sherony³, F. Johnson⁶, R. Wachnik³, J. Sudijono⁶, E. Kaste³, R. Sampson⁴, J.-H. Ku⁷, A. Steegen³, W. Neumueller¹ (1.Infineon Technologise, 2.Runesas, 3.IBM Microelectronics, 4.STMicroelectronics, 5.Toshiba America, 6.GLOBALFOUNDRIES, 7.Samsung Electronics , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download