[P-1-16] New Concept of Plasma-induced Damage in MNOS FET during Thick Dielectric Film Etching Using Fluorocarbon Gas Plasma

Y. Ichihashi¹, Y. Ishikawa¹, S. Samukawa¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-17] A Novel Hot DI Water Rinse on SOD Filled Self-Aligned Shallow Trench Isolation for Highly Reliable NAND Flash Memory

C. H. Liu¹, Y. M. Lin¹, R. T. Peng¹, H. C. Wei¹, H. J. Chien¹, Y. T. Chiu¹, L. T. Kuo¹, H. P. Hwang¹, M. S. Lee¹, S. Pittikoun¹ (1.Powerchip Semiconductor Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-18] High-Performance Poly-Si TFTs with Novel FinFet-like Channel

Y. H. Lue¹, P. Y. Kuo¹, Y. H. Wu¹, T. S. Chao¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-19] Fluorescence XAFS analysis of thermal stability for Ru/HfSiON/SiON/Si gate stack structure

H. Ofuchi¹, H. Kamada², S. Toyoda^2,3,4, H. Kumigashira^2,3,4, T. Sukegawa⁵, K. Iwamoto⁵, Z. Liu⁵, M. Oshima^2,3,4 (1.JASRI, 2.Univ. of Tokyo, 3.UT-SRRO, 4.JST-CREST, 5.STARC , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-20] Strain and stress tensor evaluation in global and local strained-Si by electron back scattering pattern

M. Tomita¹, D. Kosemura^1,2, M. Takei¹, K. Nagata¹, H. Akamatsu¹, A. Ogura¹ (1.Meiji Univ., 2.Research Fellow of the JSPS , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-21] Development of an STM simulator for quantitative dopant profiling

M. Nishizawa^1,2, L. Bolotov², T. Tada^1,2, H. Fukutome², H. Arimoto², T. Kanayama^1,2 (1.MIRAI-AIST, 2.NIRC-AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-22L] Many-electron charge transfer multiplet theory: O-atom vacancies in high-k dielectrics

G. Lucovsky¹, L. Miotti¹, K. Paz Bastos¹ (1.North Carolina State Univ , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-23L] Momentum Transfer Implantation for Sidewall Doping of FinFET's

G. Fuse¹, M. Sugitani¹, H. Matsushita¹, H. Murooka¹, M. Kuriyama², M. Tanaka² (1.SEN corporation, 2.Sumitomo Heavy Industry , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-24L] MIM Capacitors with Stacked TiO₂/Y₂O₃ Insulator Featuring High Capacitance Density and Low Leakage Current

C. C. Lin¹, Y. C. Hu¹, L. L. Chen¹, M. L. Wu¹, J. R. Wu¹, Y. H. Wu¹ (1.National Tsing Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-1-25L] Fabrication of hp 25nm Si Pillar Using New Multiple Double Patterning Technique

M. Kushibiki^1,4, A. Hara^2,4, E. Nishimura^1,4, T. Endoh^3,4 (1.Tokyo Electron AT Ltd., 2.Tokyo Electron Ltd., 3.Tohoku Univ., 4.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (441 - 450)

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