[H-3-3] Conductance of Zinc Oxide Nanocontacts Studied by In Situ Transmission Electron Microscopy

T. Kase¹, T. Kizuka¹ (1.Univ. of Tsukuba , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-3-4] The Role of Aluminum Catalyst Atoms in Shaping the Structural and Electrical Properties of Epitaxial Silicon Nanowires

O. Moutanabbir¹, S. Senz¹, M. Alexe¹, Y. Kim¹, R. Scholz¹, H. Blumtritt¹, C. Wiethoff², T. Nabbefeld², F. J. Meyer zu Heringdorf², M. Horn-von Hoegen², D. Isheim³, D. N. Seidman³ (1.Max Planck Institute of Microstructure Physics, 2.Univ. Duisburg-Essen , Germany, 3.Northwestern Univ. , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-3-5] Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy

S. Fujisawa¹, T. Sato¹, S. Hara¹, J. Motohisa¹, K. Hiruma¹, T. Fukui¹ (1.Hokkaido Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-3-6] Fabrication of Rectifying Pt/TiO_x/Pt by RF-Magnetron Sputtering

N. Zhong^1,2, H. Shima^1,2, H. Akinaga^1,2 (1.AIST, 2.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-4-1] Thermal Transport in Graphene and Few-Layer Graphene: Applications in Thermal Management and Interconnects

A. A. Balandin¹, in¹ (1.Univ. of California, Riverside , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-4-2] Plasma Discharge Condition Dependence of the Crystallographic Quality of Networked Nanographite Grown by the Photoemission-Assisted Plasma-Enhanced CVD

S. Ogawa^1,2, T. Kaga¹, Y. Ohtomo¹, M. Sato^2,3, M. Nihei^2,3, Y. Takakuwa^1,2 (1.Tohoku Univ., 2.CREST-JST, 3.Fujitsu Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-4-3] Carbon Nanotube Growth for Vias and Interconnects

J. Robertson¹, C. S. Esconjauregui¹, B. C. Bayer¹, F. Yan¹, G. Zhong¹, J. Dijon², H. Okuna² (1.Cambridge Univ. , UK, 2.CEA , France)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-5-1] Advanced Organic Polymers for the Aggressive Scaling of Low-k Materials

M. Pantouvaki¹, L. Zhao², C. Huffman¹, N. Heylen¹, Y. Ono³, M. Nakajima³, K. Nakatani³, G. P. Beyer¹, M. R. Baklanov¹ (1.IMEC, 2.Intel Corp. , Belgium, 3.Sumitomo Bikelite Co., Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-5-2] DMOTMDS/MTMOS Multi-Stacked SiOCH films for Super-Low-k and Sufficient Modulus Formed by Damage-free Neutral Beam Enhanced CVD

T. Sasaki¹, S. Yasuhara¹, T. Shimayama², K. Tajima², H. Yano², S. Kadomura², M. Yoshimaru², N. Matsunaga², S. Samukawa¹ (1.Tohoku Univ., 2.STARC , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-5-3] Improvement of Variability and Reliability in Low-k/Cu Interconnects by Selectivity Control in Dry-Etching Process

I. Kume¹, M. Ueki¹, N. Inoue¹, J. Kawahara¹, N. Ikarashi¹, N. Furutake¹, S. Saitoh¹, Y. Hayashi¹ (1.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download