[I-2-3] Suppression of gate leakage and enhancement of breakdown voltage using Al₂O₃ nano particles as gate dielectric for AlGaN/GaN MOS-HEMTs

J. Freedsman¹, T. Kubo¹, A. Watanabe¹, S. L. Selvaraj¹, T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-2-4] In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

X. Liu¹, H. C. Chin¹, E. K. F. Low¹, W. Liu², L. S. Tan¹, Y. C. Yeo¹ (1.National University of Singapore, 2.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-3-1] Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diodes

S. Suzuki¹, M. Asada¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-3-2] InSb MOS Diodes on a Si (111) Substrate Grown by Surface Reconstruction Controlled Epitaxy

A. Kadoda¹, T. Iwasugi¹, K. Nakatani¹, K. Nakayama¹, M. Mori¹, K. Maezawa¹ (1.Univ. of Toyama , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-3-3] Effect of Fluorine Incorporation on Wsi_x/Al₂O₃/GaAs Gate Stack

B. S. Ong¹, K. L. Pey¹, C. Y. Ong¹, C. S. Tan¹, C. L. Gan¹, H. Cai¹, D. A. Antoniadis², E. Fitzgerald² (1.Nanyang Tech. Univ. , Singapore, 2.Massachusetts Institute of Technology , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-3-4] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

T. Ando¹, H. Taguchi¹, K. Uchimura¹, M. Mochiduki¹, T. Iida¹, Y. Takanashi¹ (1.Tokyo Univ. of Sci. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-3-5] Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam

X. Y. Wang^1,3, C. H. Huang^1,3, Y. Ohno^1,3, M. Igarashi^1,3, A. Murayama^2,3, S. Samukawa^1,3 (1.Tohoku Univ., 2.Hokkaido Univ., 3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-4-1] SiC Power devices-Recent progress and upcoming challenges

P. Friedrichs¹ (1.SiCED Electronics Development GmbH & Co.KG , Germany)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-4-2] Recombination Model at Perimeter of Stacking Faults in 4H-SiC pin Diode with Forward Voltage Drift

K. Nakayama^1,3, Y. Sugawara¹, H. Tsuchida², C. Kimura³, H. Aoki³ (1.The Kansai Electric Power Co., Inc., 2.Central Research Inst. Of Electric Power Industry, 3.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-4-3] Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure on SiC

N. Komatsu¹, T. Satoh¹, M. Honjo¹, T. Futatuki¹, C. Kimura¹, H. Aoki¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (311 - 320)

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