[P-3-26] Low Power CMOS Stress Degradation Study by Device Current Optimization on SRAM Cell Application

Y. C. Yang¹, C. C. Ko¹, C. C. Wang¹, S. Y. Wu¹, K. C. Su¹ (1.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-1] NROM Retention with Distributive Cycling Stresses

S. W. Fang¹, A. C. Kang¹, J. R. Shih², K. Wu², Y. C. King¹, C. J. Lin¹ (1.National Tsing Hua Univ., 2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-2] Nanoscale (EOT= 5.6 nm) Nonvolatile Memory Capacitors using Atomic Layer Deposited High-κ HfAlO Nanocrystals

S. Z. Rahaman¹, A. Das¹, S. Maikap¹ (1.Chang Gung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-3] A Dual-Gate Memory Cell with Two Inter-poly Oxides

J. R. Raguet^1,2, P. Calenzo^1,2, R. Laffont¹, D. Deleruyelle¹, R. Bouchakour¹, V. Bidal², A. Regnier², S. Niel², P. Fornara², J. M. Mirabel² (1.Université Aix-Marseille 1, 2.STMicroelectronics, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-4] Fast Speed Bipolar Operation of Ge-Sb-Te based Phase Change Bridge Devices

Y. Y. Lin¹, Y. C. Chen¹, C. T. Rettner², S. Raoux², H. Y. Cheng¹, S. H. Chen¹, S. L. Lung¹, C. Lam², R. Liu¹ (1.Macronix International Co., Ltd., Taiwan, 2.IBM, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-5] Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

W. J. Wang¹, L. P. Shi¹, D. Loke², R. Zhao¹, K. G. Lim¹, H. K. Lee¹, T. C. Chong^1,2 (1.A*STAR, 2.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-6] Thermal Deformation and Failure Analysis of Phase Change Random Access Memory

H. X. Yang^1,2, L. P. Shi¹, H. K. Lee¹, R. Zhao¹, J. M. Li¹, K. G. Lim¹, T. C. Chong^1,2 (1.A*STAR, 2.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-7] A Dynamic Adaptive Reference Generation Scheme for 1T1C FeRAM

Z. Zou¹, Z. Jia¹, L. Liu¹, T. Ren¹, H. Chen¹ (1.Tsinghua Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-4-8L] Writing Disturbance-Free of a Ferroelectric Gate Field-Effect Transistor Memory with an Intermediate Electrode

S. Horita¹, B. N. Q. Trinh¹ (1.JAIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-5-1] The Formation of Lateral Interconnections Extending over 100-μm-Thick Chips

M. Murugesan¹, J. Bea¹, T. Konno¹, H. Kino¹, Y. Ohara¹, T. Fukushima¹, T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download