[PS-8-27] Effect of Fabrication Method on the Structural and Magnetic Properties of Copper Ferrite

^○S. Pongpadung¹, T. Kamwanna¹, V. Amornkitbamrung¹ (1.Khon Kaen Univ.(Thailand))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-28L] Chemical Vapor Deposition of Highly Resistive ZnO Films using Nonequilibrium N₂/O₂ Plasma Generated near Atmospheric Pressure

^○Y. Nose¹, T. Kiguchi¹, T. Yoshimura¹, A. Ashida¹, T. Uehara², N. Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Chemical Co., LTD.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-1] Performance Enhancement of Calcium-doped Zinc Oxide Thin Film Transistors Fabricated on Glass at Low Temperature

^○W. Yu¹, D. D. Han¹, G. D. Cui¹, P. Shi¹, Y. Zhang¹, Y. Y. Cong¹, X. L. Zhou¹, L. L. Huang¹, X. Zhang¹, Y. Wang¹, S. D. Zhang¹ (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-2] Oxygen Partial Pressure Dependence of Ti-Zn-O Thin-Film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

^○G. D. Cui¹, D. D. Han¹, W. Yu¹, P. Shi¹, Y. Zhang¹, L. L. Huang¹, Y. Y. Cong¹, X. L. Zhou¹, X. M. Zhang¹, S. D. Zhang¹, X. Zhang¹, Y. Wang¹ (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-3] Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics

^○Y. Y. Illarionov^1,2, M. I. Vexler², V. V. Fedorov², S. M. Suturin², N. S. Sokolov², T. Grasser¹ (1.TU Wien, 2.Ioffe Physical-Technical Inst.(Austria))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-4] All Oxide All Solution-processed Active Matrix Thin-film Transistor for Electrophoretic Display Application

^○T. T. Phan^1,2, S. Inoue¹, H. Koyama³, Y. Takamura^1,2, T. Shimoda¹ (1.JAIST, 2.JST-CREST, 3.Toppan Printing Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-5] Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate Voltage Modulation

^○N. Matsuo¹, S. Nakamura¹, T. Takada¹, A. Heya¹, K. Yamana¹, T. Sato², S. Yokoyama², Y. Omura³ (1.Univ. of Hyogo, 2.Hiroshima Univ., 3.Kansai Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-6] A Quasi-ballistic Transport Model for Top- and Back-gated Graphene Nanoribbon Field-effect Transistors

^○G. Hu¹, S. Hu¹, L. Wang¹, R. Liu¹, L. Zheng¹ (1.Fudan Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-7] A Concept of Heterogeneous Circuits with Epitaxial Tunnel Layer Tunnel FETs

^○J. H. Hung¹, P. Y. Wang¹, B. Y. Tsui¹, C. H. Yang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-8] Gate-Stacking Engineering for Insta Ge/SiO₂/SiGe MOS Devices

^○P. H. Liao¹, W. T. Lai², S. C. Luo¹, K. C. Yang¹, T. George¹, P. W. Li² (1.National Central Univ., 2.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download