Poster presentation

[18p-PG3-1~19] 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-PG3-1] Fabrication and characterization of InSb-HEMTs structures using strain-relaxed AlInSb buffer layer

^○Fujikawa Sachie^1,2, Takagi Yusuke^1,2, Maeda Takaomi^1,2, Konaka Yutaro^1,2, Hara Sinsuke², Watanabe Issei^1,2, Endo Akira², Yamashit Yoshimi², Kasamatsu Akifumi², Fujishir Hiroki^1,2 (Tokyo Univ. of Science¹, National Institute of Info. and Com. Tech.²)

1:30 PM - 3:30 PM

△ [18p-PG3-2] Theoretical study of channel structure for realizing InSb PHEMTs with high electron density and high transconductance

^○（D）Yui Nishio¹, Marie Sato¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

1:30 PM - 3:30 PM

[18p-PG3-3] Theoretical analysis of quantum states of 2DEG and 2DHG in InAs-PHEMTs

^○Marie Sato¹, Yui Nishio¹, Naoyasu Ichikawa¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

1:30 PM - 3:30 PM

[18p-PG3-4] InGaAs channel tri-gate MOSFETs with MOVPE regrown source/drain

^○Yuichi Mishima¹, Toru Kanazawa¹, Haruki Kinoshita¹, Eiji Uehara¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

1:30 PM - 3:30 PM

[18p-PG3-5] Temperature Dependence of Current-Voltage Characteristics of GaN/AlN Resonant Tunneling Diode

^○Masanori Nagase¹, Tokio Takahashi², Mitsuaki Shimizu² (AIST-NRI¹, AIST-APERC²)

1:30 PM - 3:30 PM

[18p-PG3-6] Carbon-Related Deep-Level Defects and Turn-On Current Recovery Characteristics in AlGaN/GaN Hetero-Structures

^○Yoshitaka Nakano¹, Yoshihiro Irokawa², Masatomo Sumiya², Yasunobu Sumida³, Shuichi Yagi³, Hiroji Kawai³ (Chubu Univ.¹, NIMS², POWDEC³)

1:30 PM - 3:30 PM

[18p-PG3-7] Switching Characteristics of GaN/AlGaN/GaN Polarization Super Junction (PSJ) Transistor

^○Shuichi Yagi¹, Shoko Hirata¹, Sota Matsumoto¹, Yoshiharu Kouji¹, Hiroshi Sugiura¹, Hiroji Kawai¹ (POWDEC K.K¹)

1:30 PM - 3:30 PM

[18p-PG3-8] Breakdown Voltage Characteristics of GaN/AlGaN/GaN Polarization Super Junction (PSJ) Transistor

^○Sota Matsumoto¹, Shoko Hirata¹, Yoshiharu Kouji¹, Hiroshi Sugiura¹, Shuichi Yagi¹, Hiroji Kawai¹ (POWDEK. K.K¹)

1:30 PM - 3:30 PM

[18p-PG3-9] Process dependent electrical characteristics of La2O3 gate dielectrics on AlGaN/GaN devices

^○Jiangning Chen¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹, Wataru Saito³ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Toshiba³)

1:30 PM - 3:30 PM

[18p-PG3-10] Frequency dispersion of g_m in InAlN/GaN HEMTs and AlGaN/GaN HEMTs

^○Shinya Hatakeyama¹, Tetsuya Suemitsu¹, Taiichi Otsuji¹, Kengo Kobayashi¹, Tomohiro Yoshida¹ (RIEC, Tohoku Univ¹)

1:30 PM - 3:30 PM

△ [18p-PG3-11] Analysis of traps in GaN HEMTs by bias dependence of transient response

^○Yutaro Yamaguchi¹, Toshiyuki Oishi¹, Hiroshi Otsuka¹, Koji Yamanaka¹, Teo Koon Hoo², Yasuyuki Miyamoto³ (Mitsubishi Electric corp.¹, Mitsubishi Electric Research Laboratories², Tokyo Institute of Technology³)

1:30 PM - 3:30 PM

[18p-PG3-12] Characterization of traps in MOCVD n-GaN doped with carbon on GaN substrate

Kazuki Miyamoto¹, ^○Yutaka Tokuda¹ (Aichi Inst. of Technol.¹)

1:30 PM - 3:30 PM

[18p-PG3-13] Electrical Characterization of interface and bulk traps of AlGaN/GaN Structure by Electrical Stress Measurement

^○Xihao Tan¹, takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

1:30 PM - 3:30 PM

[18p-PG3-14] Effect of Annealing on Contact properies with TiB₂ Electrodes on AlGaN/GaN

^○Mari Okamoto¹, Yoshihiro Matsukawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori², Wataru Saito³, Hiromichi Ohashi¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Toshiba³)

1:30 PM - 3:30 PM

[18p-PG3-15] The possibility for low-resistive contacts formation on AlGaN/GaN high electron mobility transistors by introducing uneven AlGaN layers

^○Masayuki Kamiya¹, Yusuke Takei¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, Toshiba²)

1:30 PM - 3:30 PM

[18p-PG3-16] Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation

^○Minjae Yoon¹, Kazuma Terayama¹, Akira Nakajima², Shinichi Nishizawa², Hiromichi Ohasi², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, AIST²)

1:30 PM - 3:30 PM

[18p-PG3-17] Influence of Surface Treatments on Ni/AlGaN/GaN schottky characteristics

^○（M1）Ariabasu Arusaruman¹, Takayuki Sawada¹, Kazuhiko Suzuki¹, Takahiro Masuda¹ (Hokkaido Inst. Technol.¹)

1:30 PM - 3:30 PM

[18p-PG3-18] Electrical characteristics of low-Mg-doped p-AlGaN and p-InGaN Schottky contacts

^○Toshichika Aoki¹, Sachi Tachibana¹, Kenji Shiojima¹ (Univ. of Fukui¹)

1:30 PM - 3:30 PM

[18p-PG3-19] Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts (2)

^○Moe Naganawa¹, Toshichika Aoki¹, Kenji Shiojima¹, Hiroshi Amano², Son Ji-Su² (Univ. of Fukui¹, Nagoya Univ.²)

Oral presentation

[19a-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-D8-1] Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation

^○Kazuma Terayama¹, Akira Nakajima², Shinichi Nishizawa², Hiromichi Ohasi², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, AIST²)

9:15 AM - 9:30 AM

[19a-D8-2] Investigation on the vertical buffer leakage current using AlGaN/GaN HEMTs on GaN substrates

^○Shinichi Tanabe¹, Noriyuki Watanabe¹, Masahiro Uchida², Takashi Fukada³, Kazumasa Kiyomi³, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹, NTT-AT², Mitsubishi Chemical³)

9:30 AM - 9:45 AM

[19a-D8-3] Electron-temperature estimation of AlGaN/GaN HEMTs based on Electro-Luminescence

^○Yuichi Fujimoto¹, Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Institute of Technology¹)

9:45 AM - 10:00 AM

[19a-D8-4] Analysis of transient characteristics of GaN HEMT using Field Plate which applies voltage independently

^○Suguru Mase¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Institute of Technology¹)

10:00 AM - 10:15 AM

△ [19a-D8-5] Off-stress induced current instability in AlGaN/GaN HEMT

^○（M1）Kenya Nishiguchi¹, Joel T.Asubar¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

10:15 AM - 10:30 AM

△ [19a-D8-6] Simulation of GaN HFET Side-gating Effect Photo-responses

^○Yusuke Ikawa¹, Keunsam Lee², Jin-Ping Ao¹, Yasuo Ohno³ (Univ. Tokushima¹, Nihon Synopsys², e-Device³)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-D8-7] Selective dry-etching technologies for normally-off GaN HEMTs

^○Akihiro Ando¹, Yamato Osada², Ryuichiro Kamimura², Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech¹, ULVAC²)

11:00 AM - 11:15 AM

△ [19a-D8-8] Selective-electrochemical etching of p-GaN layers grown on AlGaN/GaN heterostructures

^○Yusuke Kumazaki¹, Taketomo Sato¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

11:15 AM - 11:30 AM

△ [19a-D8-9] Current Collapse Suppression in AlGaN/GaN HEMTs by Means of Slant Field Plates Fabricated by Multi-layer SiCN

^○（M2）Kengo Kobayashi¹, Shinya Hatakeyama¹, Tomohiro Yoshida¹, Yuhei Yabe¹, Daniel Piedra², Tomas Palacios², Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹, MTL, MIT²)

11:30 AM - 11:45 AM

△ [19a-D8-10] AlGaN/GaN-based p-channel HFETs with wide-operating temperature

^○Hiroaki Yonezawa¹, Rei Kayanuma¹, Akira Nakajima³, Shinichi Nishizawa³, Hiromichi Ohashi³, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai², Kazuo Tsutsui¹ (Tokyo Tech.IGSSE¹, Tokyo Tech.FRC², AIST³)

11:45 AM - 12:00 PM

[19a-D8-11] A GaN HEMT fine gate process by an i-line stepper

^○Hiroyuki Ichikawa¹, Chihoko Mizue¹, Isao Makabe¹, Yasunori Tateno¹, Ken Nakata¹, Kazutaka Inoue¹ (Sumitomo Electric Industries, Ltd.¹)

12:00 PM - 12:15 PM

[19a-D8-12] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (II)

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

12:15 PM - 12:30 PM

[19a-D8-13] Suppression of self-heating effect in AlGaN/GaN HEMTs by transfer to a copper plate using layered BN as a release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

Oral presentation

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[19p-D8-1] Measurement of Plasma-Induced Defects in GaN by Light Irradiate Excitation

^○（D）Takuma Takimoto¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

2:15 PM - 2:30 PM

[19p-D8-2] Annealing Behavior of Plasma-Induced Defects including Deep Level Defects in GaN

^○（D）Takuma Takimoto¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

2:30 PM - 2:45 PM

[19p-D8-3] Reactivation of deactivated Si-donors in plasma-expoesd n-GaN upon near-IR irradiation

^○Hiroki Yokoyama¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

2:45 PM - 3:00 PM

[19p-D8-4] Investigation on interface traps in AlGaN/GaN heterojunction by conductance method

^○Pucheng Liu¹, Chunmeng Dou¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

3:00 PM - 3:15 PM

[19p-D8-5] Ti / C ratio and film thickness dependency of Ti/C/TiN contact resistance on AlGaN / GaN

^○Yoshihiro Matsukawa¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Wataru Saito³, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.³)

3:15 PM - 3:30 PM

[19p-D8-6] A temperature dependent model for GaN schottky barrier diode

^○Toshiyuki Oishi¹, Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Koji Yamanaka¹, Yoichi Nogami¹, Hiroshi Fukumoto¹, Yasuyuki Miyamoto² (Mitsubisi Electric¹, Tokyo Institute of Technology²)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [19p-D8-7] Mapping of thermal degradation of n-GaN Schottky diodes using scanning internal photoemission microscopy

^○Shingo Yamamoto¹, Yuhei Kihara¹, Kenji Shiojima¹ (Univ. of Fukui¹)

4:00 PM - 4:15 PM

△ [19p-D8-8] Properties of ohmic contact to 2DEG of AlGaN/GaN strucutres depending on AlGaN layer thickness for different contact metals

^○Yusuke Takei¹, Mari Okamoto¹, Shin Man¹, Rei Kayanuma¹, Masayuki Kamiya¹, Wataru Saito³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Inst. Technology¹, Tokyo Inst. Technology², Toshiba³)

4:15 PM - 4:30 PM

[19p-D8-9] Effect of annealing on properties of InAlN MOS diodes with ALD-Al₂O₃insulator layer

^○Masahito Chiba¹, Takuma Nakano¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

4:30 PM - 4:45 PM

△ [19p-D8-10] Properties of Al₂O₃/InAlN interface formed by 2-step ALD (2)

^○Takuma Nakano¹, Masahito Chiba¹, Yoichiro Odanagi¹, Masamichi Akazawa¹ (Hokkaido Univ. RCIQE¹)

4:45 PM - 5:00 PM

[19p-D8-11] Characterization of MOS Interface Properties in Al₂O₃/AlGaN/GaN Structures with Dry-etched AlGaN Surface

^○Zenji Yatabe¹, Yujin Hori¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

5:00 PM - 5:15 PM

▲ [19p-D8-12] Interface state density, gate-control efficiency, and intrinsic transconductance of AlN/AlGaN/GaN metal-insulator-semiconductor devices

^○Hong-An SHIH¹, Masahiro Kudo¹, Tuan Quy Nguyen¹, Toshi-kazu Suzuki¹ (JAIST¹)

5:15 PM - 5:30 PM

[19p-D8-13] Analysis of metal-semiconductor interface in the formation of ohmic contact for GaN based HEMT devices

^○Mahadevaiah Gopal¹, Takako Motai¹, Akira Yoshioka², Yoshiharu Takada², Hitoshi Sugiyama¹ (Toshiba Corporation, Advanced Discrete device development center, Unit Process development dept.¹, Toshiba Corporation, Advanced Discrete device development center,Device development dept.²)

Oral presentation

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-D8-1] Band Offsets of NO2-Exposed H-Terminated Diamond/Al2O3 Interface Determined by Synchrotron Radiation XPS/UPS/XANES

^○Makoto Kasu¹, Kaxzutoshi Takahashi², Masayuki Imamura², Kazuyuki Hirama³ (Saga Univ.¹, Synchrotron Light Application Center, Saga Univ², NTT Basic Research Labs³)

9:15 AM - 9:30 AM

△ [20a-D8-2] Capacitance-Voltage Characteristics of Diamond MOSFET

^○（B）Kazuya Harada¹, Kazuyuki Hirama², Makoto Kasu¹ (Saga Univ.¹, NTT BRL.²)

9:30 AM - 9:45 AM

[20a-D8-3] Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

^○Masataka Higashiwaki¹, Kohei Sasaki^2,1, Wong Man Hoi¹, Takafumi Kamimura¹, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi² (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

9:45 AM - 10:00 AM

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃

^○Man Hoi Wong¹, Takafumi Kamimura¹, Kohei Sasaki^2,1, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi², Masataka Higashiwaki¹ (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

10:00 AM - 10:15 AM

[20a-D8-5] Electron mobility and concentration of β-Ga₂O₃ single crystal

^○（B）Kazuya Harada¹, Akikazu Matsunaga¹, Kazuyuki Iizuka², Kimiyoshi Koshi², Akihito Kuramata², Makoto Kasu¹ (Saga Univ.¹, Tamura Corp.²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [20a-D8-6] Visualization of depletion layer in SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

^○Norimichi Chinone¹, Takashi Nakamura², Yasuo Cho¹ (RIEC, Tohoku Univ.¹, ROHM Co., Ltd.²)

10:45 AM - 11:00 AM

[20a-D8-7] Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR

^○Yiming Lei¹, Shu Munekiyo¹, Kuniyuki Kakushima¹, Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Satoshi Yamakawa³, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³, Kenji Natori¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Mitsubishi Electric Corp.³)

11:00 AM - 11:15 AM

[20a-D8-8] C-V characteristics of SiC-MOS capacitors with La-silicate interfacial layer

^○Shu Munekiyo¹, Yiming Lei¹, Kuniyuki Kakushima¹, Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Satoshi Yamakawa³, Kenji Natori¹, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Mitsubishi Electric Corp.³)

11:15 AM - 11:30 AM

△ [20a-D8-9] High mobility III-V n-type and p-type field-effect transistors on a Si/SiO2 substrate

^○Kuniharu Takei^1,2, Steven Chuang², Hui Fang², Morten Madsen², Junghyo Nah², Rehan Kapadia², Ali Javey² (Osaka Prefecture University¹, University of California, Berkeley²)

11:30 AM - 11:45 AM

△ [20a-D8-10] Impact of T-gate Stem Height on Parasitic Gate Delay Time in InGaAs-HEMTs

^○Tomohiro Yoshida¹, Kengo Kobayashi¹, Shinya Hatakeyama¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹)

11:45 AM - 12:00 PM

▲ [20a-D8-11] Enhancement of Breakdown Voltages in InP-based HEMTs with Tri-Layer Channel Structure

^○Amine El Moutaouakil¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹)

Oral presentation

[20p-D8-1~8] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 1:00 PM - 3:00 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00〜13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-D8-1] High-breakdown-voltage InP/InGaAs DHBT with an fmax of over 400 GHz

^○Norihide Kashio¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Photonics Lab.¹)

1:15 PM - 1:30 PM

△ [20p-D8-2] Low-turn-on-voltage HBTs with high-In-and-Sb-content InGaAsSb base

^○Takuya Hoshi¹, Norihide Kashio¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹, Masaki Kohtoku¹ (NTT Photonics Labs.¹)

1:30 PM - 1:45 PM

[20p-D8-3] Electrical Characteristics of InP-based HBTs on SiC Substrate Bonded by Surface Activated Bonding

^○Yuta Shiratori¹, Norihide Kashio¹, Eiji Higurashi², Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹, Univ. of Tokyo²)

1:45 PM - 2:00 PM

[20p-D8-4] Shrinking Circuits Area with Ge- and In_0.53Ga_0.47As Channel Transistors

^○Mizuki Ono¹, Tsutomu Tezuka¹ (GNC, AIST¹)

2:00 PM - 2:15 PM

[20p-D8-5] study of effects of roughness and dislocation scatterings on device characteristics in InSb HEMT

Sｈohei Nagai¹, Yutaro Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe^1,2, Akifumi Kasamatsu², Hiroki Fujishiro¹, ^○Shota Hatsushiba¹ (Tokyo University of science¹, National Institute of Information²)

2:15 PM - 2:30 PM

[20p-D8-6] Analysis of Delay Time in III-V DG MOSFETs with Various Channel Materials

^○Yuki Yajima¹, Ryoko Ohama¹, Akio Nishida¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo University of Science¹)

2:30 PM - 2:45 PM

[20p-D8-7] Lichtenecker's logarithmic mixture law for electrical conduction in AlTiO/n-GaAs(001) metal-insulator-semiconductor structures

^○Toshimasa Ui¹, Masahiro Kudo¹, Toshi-kazu Suzuki¹ (JAIST¹)

2:45 PM - 3:00 PM

[20p-D8-8] Surface Segregation Prediction System: SurfSeg

^○Michiko Yoshitake¹ (NIMS¹)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-PG3-1~19] 14.3 Electron devices and Process technology

△ [18p-PG3-2] Theoretical study of channel structure for realizing InSb PHEMTs with high electron density and high transconductance

△ [18p-PG3-11] Analysis of traps in GaN HEMTs by bias dependence of transient response

[19a-D8-1~13] 14.3 Electron devices and Process technology

△ [19a-D8-5] Off-stress induced current instability in AlGaN/GaN HEMT

△ [19a-D8-6] Simulation of GaN HFET Side-gating Effect Photo-responses

△ [19a-D8-8] Selective-electrochemical etching of p-GaN layers grown on AlGaN/GaN heterostructures

△ [19a-D8-9] Current Collapse Suppression in AlGaN/GaN HEMTs by Means of Slant Field Plates Fabricated by Multi-layer SiCN

△ [19a-D8-10] AlGaN/GaN-based p-channel HFETs with wide-operating temperature

[19p-D8-1~13] 14.3 Electron devices and Process technology

△ [19p-D8-7] Mapping of thermal degradation of n-GaN Schottky diodes using scanning internal photoemission microscopy

△ [19p-D8-8] Properties of ohmic contact to 2DEG of AlGaN/GaN strucutres depending on AlGaN layer thickness for different contact metals

△ [19p-D8-10] Properties of Al2O3/InAlN interface formed by 2-step ALD (2)

▲ [19p-D8-12] Interface state density, gate-control efficiency, and intrinsic transconductance of AlN/AlGaN/GaN metal-insulator-semiconductor devices

[20a-D8-1~11] 14.3 Electron devices and Process technology

△ [20a-D8-2] Capacitance-Voltage Characteristics of Diamond MOSFET

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga2O3

△ [20a-D8-6] Visualization of depletion layer in SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

△ [20a-D8-9] High mobility III-V n-type and p-type field-effect transistors on a Si/SiO2 substrate

△ [20a-D8-10] Impact of T-gate Stem Height on Parasitic Gate Delay Time in InGaAs-HEMTs

▲ [20a-D8-11] Enhancement of Breakdown Voltages in InP-based HEMTs with Tri-Layer Channel Structure

[20p-D8-1~8] 14.3 Electron devices and Process technology

△ [20p-D8-2] Low-turn-on-voltage HBTs with high-In-and-Sb-content InGaAsSb base

△ [19p-D8-10] Properties of Al₂O₃/InAlN interface formed by 2-step ALD (2)

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃