The Japan Society of Applied Physics

587 results (1 - 10)

[A-2-3] Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric

C. Y. Kang1, C. S. Park1, H. K. Park1, S. C. Song1, R. Choi1, B. H. Park2, B. Woo2, K. T. Lee3, J. Lee4, H. Hwang4, G. Bersuker1, B. H. Lee1, H. H. Tseng1, R. Jammy5 (1.SEMATECH, 2.Poongsan Microtech, USA, 3.POSTECH, 4.GIST, Korea, 5.IBM Assignee, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (1 - 10)