[P-14-9] High Performance Transparent Conducting Ga-doped ZnO film Deposited by RF-magnetron Sputter Deposition Technique

J. K. Kim^1,2, J. M. Lee^1,2, J. W. Lim^1,2, J. H. Kim², S. J. Yun^1,2 (1.Univ. of Sci. and Tech.(Korea), 2.Electronics and Telecommunications Res. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-14-10] Improvement of Opt-Electrical Properties in GaAsN by Controlling Step Density During Chemical Beam Epitaxy Growth

H. Suzuki¹, M. Inagaki¹, T. Honda¹, Y. Ohshita¹, N. Kojima¹, M. Yamaguchi¹ (1.Toyota Technological Inst.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-14-11] First Principles Calculations on ∑ 3 Grain Boundary Impurities in Polycrystalline Silicon

A. Suvitha¹, N. S. Venkataramanan¹, R. Sahara¹, H. Mizuseki¹, Y. Kawazoe¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[PL-1-0] Welcome Address and SSDM Aword Presentation

2009 International Conference on Solid State Devices and Materials

[PL-1-1] Moore's law past 32nm: the challenges in physics and technology scaling

K. J. Kuhn¹ (1.Intel Corp.,(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

[PL-1-2] The Third Generation of Solar Photovoltaic Electricity

T. Tomita¹ (1.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[PL-2-1] Long term strategy for mitigating climate Change

Y. Kaya¹ (1.RITE(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (701 - 707)

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