[P-4-4] Precision Programming Power Control in Embedded P-channel SONOS Flash using Transient-IV Method

Y. J. Chen¹, Y. J. Ting¹, C. J. Liu¹, W. T. Sun¹, R. Shen¹ (1.eMemory Tech. Inc.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-5] Low Power 0.13um Single Poly Embedded P-channel SONOS Flash using Band-to-Band Programming

K. Y. Hsiao¹, Y. J. Ting¹, C. J. Liu¹, W. T. Sun¹, R. Shen¹, C. Hsu¹ (1.eMemory Tech. Inc.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-6] Source-Side Injection Programmed P-channel Self-Aligned-Nitride OTP Cell for 90nm Logic Nonvolatile Memory Applications

H. OuYang¹, Y. J. Chen¹, C. E. Huang¹, C. J. Lin¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-7] Optimized Silicon Nitride MONOS Memory for Superior Endurance of 10M Cycles

K. Yamabe¹, S. Yoshida¹, Y. Taniguchi¹, S. Kamohara¹ (1.Renesas Tech. Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-8] Programming Current Enhancement by Ge Incorporation into Tunnel Oxide Film

T. Ito¹, Y. Mitani¹, Y. Nakasaki¹, M. Koike¹, T. Konno¹, H. Matsuba¹, W. Kaneko¹, T. Kai¹, Y. Ozawa¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-9] Improved Switching Uniformity of a Carbon-based ReRAM device by Controlling Size of Conducting Filament

J. Park¹, H. Choi¹, M. Jo¹, J. Lee¹, T. W. Kim¹, J. Yoon¹, D. J. Seong¹, W. Lee¹, M. Chang¹, J. Shin¹, T. Lee¹, H. Hwang¹ (1.Gwangju Inst. Of Sci. and Tech.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-10] Formation free resistive switching memory device using Ge_0.4Se_0.6 solid electrolyte

S. Z. Rahaman¹, S. Maikap¹, C. H. Lin², T. Y. Wu², Y. S. Chen², P. J. Tzeng², F. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ.(Taiwan), 2.Industrial Tech. Res. Inst.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-11] Improved resistive switching of HfO_X/TiN stack with a reactive metal layer and annealing

P. S. Chen¹, H. Y. Lee^2,3, Y. S. Chen², F. Chen², M. J. Tsai² (1.Mingshin Univ. of Sci. and Tech.(Taiwan), 2.Industrial Tech. Res. Inst.(Taiwan), 3.National Tsing Hua Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-12] A Novel Capacitor-less 1T-DRAM on Partially Depleted SOI pMOSFET based on Direct-tunneling Current in the Partial n+ Poly Gate

G. Guegan¹, P. Touret¹, G. Molas¹, C. Raynaud¹, J. Pretet² (1.CEA - LETI/MINATEC(France), 2.STMicroelectronics(France))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-14] Ferroelectric P(VDF-TeFE) Gate FET Memory

T. Watanabe¹, H. Miyashita¹, T. Kanashima¹, M. Okuyama¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (541 - 550)

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