[P-1-20] Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing

K. Hara¹、Y. Tanushi¹、S. Kuroki¹、K. Kotani¹、T. Ito¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-21] Low Contact Resistance with Low Silicide/p⁺-Silicon Schottky Barrier for High Performance p-channel MOSFETs

H. Tanaka¹、T. Isogai¹、T. Goto¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-22] Mobility Behavior in Ge_1-xSn_x Layers Grown on SOI Substrates

N. Tsutsui¹、Y. Shimura¹、O. Nakatsuka¹、A. Sakai²、S. Zaima¹ (1.Nagoya Univ.(Japan)、2.Osaka Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-23] Evaluation of anisotropic biaxial stress using an immersion lens by Raman analysis based on the polarization rules

D. Kosemura^1,3、M. Takei¹、K. Nagata¹、H. Akamatsu¹、R. Shimidzu²、A. Ogura¹ (1.Meiji Univ.(Japan)、2.PHOTON Design Corp.(Japan)、3.JSPS(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-24] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs

K. Eriguchi¹、Y. Nakakubo¹、A. Matsuda¹、M. Kamei¹、Y. Takao¹、K. Ono¹ (1.Kyoto Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-25] Mechanism for Generation of Molecular-Level Line-Edge Roughness of ArF photoresist during Plasma Etching Processes

K. Koyama¹、B. Jinnai¹、S. Maeda²、K. Kato²、A. Yasuda²、H. Momose²、S. Samukawa¹ (1.Tohoku Univ.(Japan)、2.Mitsubishi Rayon Co., Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-26] Mechanism of Mask Distortion during Resist Trimming

N. Kofuji¹、H. Miura² (1.Hitachi, Ltd.(Japan)、2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-27] Effect of UV irradiation in plasma on Pohotoresist LER

A. Yabata¹、M. Takahashi¹、N. Kuriyama¹ (1.OKI Semiconductor Miyagi Co., Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-28] Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects

A. Matsuda¹、Y. Nakakubo¹、M. Kamei¹、Y. Takao¹、K. Eriguchi¹、K. Ono¹ (1.Kyoto Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-1] Self-Formation of Ti-Based Barrier Layers in Cu(Ti)/Porous-Low-k Samples

K. Ito¹、K. Kohama¹、T. Tanaka¹、K. Mori²、K. Maekawa²、Y. Shirai¹、M. Murakami³ (1.Kyoto Univ.(Japan)、2.Renesas Tech. Corp.(Japan)、3.The Ritsumeikan Trust(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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