[K-3-4] Robustness of Charge-qubit Cluster States to Double Quantum Point Contact Measurement

T. Tanamoto¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-3-5] Measurement of Electron Spin State in a Semiconductor Quantum well using Tomographic Kerr Rotation

T. Inagaki¹, H. Kosaka^1,2, Y. Rikitake^2,3, H. Imamura^2,4, Y. Mitsumori^1,2, K. Edamatsu¹ (1.Tohoku Univ.(Japan), 2.CREST-JST(Japan), 3.Sendai National College of Tech.(Japan), 4.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-4-1] Electromechanical Systems for Memory and Logic Devices

I. Mahboob¹, H. Yamaguchi¹ (1.NTT Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-4-2] Noise-enhanced Sensing using Micromechanical Nonlinear Resonator

Y. Yoshida¹, T. Ono¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-4-3] Carrier-induced Dynamic Backaction in GaAs Micromechanical Resonators

H. Okamoto¹, D. Ito^1,2, K. Onomitsu¹, H. Sanada¹, H. Gotoh¹, T. Sogawa¹, H. Yamaguchi^1,2 (1.NTT Basic Res. Labs.(Japan), 2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-4-4] A Novel Thin-film Transistor with Suspended Nanowire Channels and Side-gated Configuration

C. H. Kuo¹, H. C. Lin^1,2, G. J. Li¹, H. H. Hsu¹, C. J. Su¹, T. Y. Huang¹ (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-5-1] High hole current density in diamond MOSFETs fabricated on H-terminated Iia-type (111) diamond substrate

K. Tsuge¹, Y. Jingu¹, H. Umezawa², H. Kawarada¹ (1.Waseda Univ.(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-5-2] Performance Comparisons of Ballistic Silicon-Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects

H. Ando¹, S. Sawamoto¹, T. Maegawa¹, T. Hara¹, H. Yao¹, H. Tsuchiya¹, M. Ogawa¹ (1.Kobe Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-5-3] Formation of Highly B-doped Source & Drain Layers with TiC Ohmic Contacts for H-terminated Diamond MOSFETs

T. Tsuno¹, Y. Jingu¹, H. Umezawa², H. Kawarada¹ (1.Waseda Univ.(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-5-4] Cross-sectional Low-temperature Scanning Tunneling Spectroscopy of a p-n Junction and an Inversion Layer in InAs

K. Suzuki¹, K. Kanisawa¹, K. Onomitsu¹, K. Muraki¹ (1.NTT Basic Res.Labs.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (441 - 450)

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