[P-3-7] Ultra thin Ni-silicides with low contact resistance on SOI and strained-SOI

L. Knoll¹, Q. T. Zhao¹, S. Habicht¹, C. Urban¹, B. Ghyselen², S. Mantl¹ (1.Forschungszentrum Juelich(Germany), 2.SOITEC(France))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-8] Design and Fabrication of Low-actuation Voltage and Low-Insertion Loss RF Switch by CMOS-MEMS and EN/IG Processes

J. T. Huang¹, P. C. Lin¹, F. H. Yeh¹, Y. K. Hsu¹, K. Y. Lee¹ (1.National Taipei Univ of Tech.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-9] Experimental Analysis of Anisotropic Impact Ionization in (110) Surface pMOSFETs

T. K. Kang¹, C. M. Kuo¹, C. L. Huang¹, H. L. Liu¹, C. Y. Wu¹, S. L. Wu¹, Y. T. Huang², S. J. Chang² (1.Cheng Shiu Univ.(Taiwan), 2.National Cheng Kung Univ(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-10] Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique

H. Yang¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-11] New Observations of FN Stress Induced Performance Degradation of RF MOSFETs

B. Xiao¹, L. Zhang¹, R. Huang¹, D. Wu¹, F. Song¹, Y. Y. Wang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-12] Effects of Negative Bias Temperature Stress-induced Degradation and Mismatch on pMOSFETs in 90 nm Technology

C. H. Tu¹, S. Y. Chen¹, A. E. Chuang¹, H. S. Huang¹, Z. W. Jhou², S. Chou², J. Ko² (1.National Taipei Univ. of Tech.(Taiwan), 2.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-13] Subcircuit Compact Model for Dopant-Segregated Schottky Silicon-Nanowire MOSFETs

G. Zhu¹, X. Zhou¹, Y. K. Chin¹, K. L. Pey¹, G. H. See², S. Lin¹, J. Zhang¹, Z. Chen¹ (1.Nanyang Technological Univ.(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-14] Intrinsic-Parameter-Fluctuated Power-Delay Characteristics in 16-nm-Metal-Gate CMOS Devices and Circuits

M. H. Han¹, C. H. Hwang¹, Y. Li^1,2 (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-15] Carrier Transportation of ALD HfLaO Gate Dielectrics with 0.72 nm EOT

H. W. Chen¹, Y. W. Liao¹, S. Y. Chen¹, C. H. Liu², H. S. Huang¹, L. W. Cheng³, C. T. Lin³, G. H. Ma³ (1.National Taipei Univ. of Tech.(Taiwan), 2.National Taiwan Normal Univ.(Taiwan), 3.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-16] High-Temperature Dependent Data Extraction and Modeling of Effective Channel Mobility in MOSFETs using Measured S-Parameters

B. Ko¹, D. Jung¹, S. Lee¹ (1.Hankuk Univ. of Foreign Studies)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (521 - 530)

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