[G-3-1] Direct Measurement of Back-Tunneling Current during Program/Erase Operation of MONOS Memories and Its Dependence on Gate Work Function

J. Fujiki¹, S. Fujii¹, N. Yasuda¹, K. Muraoka¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-3-2] Thickness Effect on Read Window in a Two-Bit Nitrided-based Trapping Storage Cell

G. D. Lee¹, C. H. Cheng¹, S. H. Ku¹, C. H. Liu¹, S. H. Kuo¹, C. H. Lee¹, S. W. Huang¹, N. K. Zous¹, M. S. Chen¹, W. P. Lu¹, K. C. Chen¹, C. Y. Lu¹ (1.Macronix Int'l Co., Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-3-3] Engineering of Si-rich Nitride Charge-Trapping Layer for Highly Reliable MONOS Type NAND Flash Memory with MLC Operation

R. Fujitsuka¹, K. Sekine¹, A. Sekihara¹, A. Fukumoto¹, J. Fujita¹, F. Aiso¹, Y. Ozawa¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-3-4] Thermally Robust Nanocrystal Memory with Co Bio-nanodot Self-assembled Monolayer as a Charge Trap Medium on Ultrathin LaAlO₃ Layer

S. Jung¹, K. Ohara², Y. Uraoka², T. Fuyuki², I. Yamashita², H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech.(Republic of Korea), 2.NAIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-4-1] Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

M. Mizukami¹, K. Nishihara², H. Ishida², F. Aiso², T. Iguchi², D. Ichinose², A. Fukumoto², N. Aoki², M. Kondo², T. Izumida², H. Tanimoto², T. Enda², T. Suzuki², I. Mizushima², F. Arai² (1.Toshiba R&D Center(Japan), 2.Toshiba Advanced Micro-electronics Center(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-4-2] The Operation Scheme and Process Optimization in TLC(Triple Level Cell) NAND Flash Characteristics

J. Yang¹, M. Park¹, S. Jung¹, S. Park¹, S. Cho¹, J. An¹, J. Lee¹, H. Lee¹, M. K. Cho¹, K. O. Ahn¹, K. Jin¹, Y. Koh¹ (1.Hynix Semiconductor Inc.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-4-3] The Influence of Mechanical Stress on Data Retention in Advanced NAND Flash

S. W. Seo¹, H. Oh¹, Y. Yang¹, S. M. Yi¹, S. Y. Kim¹, P. Kim¹, D. K. Lee¹, H. Yang¹, H. Lee¹, M. K. Cho¹, K. O. Ahn¹, Y. Koh¹ (1.Hynix Semiconductor Inc.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-4-4] A New Differential Logic-Compatible Multiple-Time Programmable (MTP) Memory Cell

Y. H. Tsai¹, H. L. Yang¹, W. J. Lin¹, C. J. Lin¹, Y. C. King¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-5-1] Current Status and Future Challenge of PRAM

Y. H. Shih¹ (1.Macronix Int'l Co., Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-5-2] Elevated-Confined Phase Change RAM cells

H. K. Lee¹, L. P. Shi¹, R. Zhao¹, H. X. Yang¹, K. G. Lim¹, J. M. Li¹, T. C. Chong^1,2 (1.A*STAR(Singapore), 2.National Univ. of Singapore(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (231 - 240)

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