[J-2-7L] High-electron-mobility InAs thin layers down to ~ 100 nm obtained by epitaxial lift-off and normal/inverted van der Waals bonding on flexible substrates
2009 International Conference on Solid State Devices and Materials |PDF Download
707 results (381 - 390)
[J-3-1] SiC Power MOSFETs and Diodes for Next Generation Power Modules
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-3-2] Improvement of Interface Properties by NH3 Pretreatment for 4H-SiC(000-1) MOS Structure
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-3-3] Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation of Low Temperature
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-3-4] Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-3-5] High-temperature Operation of Boron-implanted Diamond FETs
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-4-1] A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP-based HEMTs
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-4-2] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-4-3] 0.25-µm-Emitter InP HBTs with a Passivation Ledge Structure
2009 International Conference on Solid State Devices and Materials |PDF Download
[J-4-4] In0.49GaP/Al0.45GaAs/In0.22GaAs/Al0.22GaAs Barrier Enhancement-mode Pseudomorphic High Electron Mobility Transistor with an Enhanced Gate Forward Turn-on Voltage
2009 International Conference on Solid State Devices and Materials |PDF Download