[P-6-9] Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and their Applications as Temperature Sensors

A. H. Zahmani¹, A. Nishijima¹, Y. Morimoto¹, H. Wang^1,2, J. F. Li², A. Sandhu¹ (1.Tokyo Tech(Japan), 2.Tsinghua Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-10] Stress Analysis in GaN Epilayer after Chemical Mechanical Polishing (CMP) from Sapphire Substrates

Y. K. Su^1,2, C. C. Kao¹, C. L. Lin², J. J. Chen¹ (1.National Cheng Kung Univ.(Taiwan), 2.Kun-Shan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-11] Investigation of Electrostatic Integrity for Ultra-Thin-Body GeON MOSFET

V. P. H. Hu¹, Y. S. Wu¹, P. Su¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-12] The Effect of Distribute Bragg Reflector in Device Temperature of AlGaInP Light-emitting Diode

Y. K. Yang¹, W. C Lien¹, Y. S. Wang², L. H. Zen¹, J. F. Chen¹, N. C. Chen¹ (1.Chang Gung Univ.(Taiwan), 2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-13] Improved Characteristics of InAlAs/InGaAs MOS-MHEMTs by using Ozone Water Oxidation Method

A. Y. Kao¹, C. S. Ho², W. C. Hsu², Y. N. Lai², C. S. Lee¹ (1.Feng Chia Univ.(Taiwan), 2.National Cheng Kung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-14] Width Dependent Electrically Stress Degradation of Bottom Gate Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

D. H. Nam¹, K. I. Chai¹, S. S. Park¹, J. G. Park¹, H. J. Yun¹, W. H. Choi¹, H. D. Lee¹, G. W. Lee¹ (1.Chungnam National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-15] Transparent AZO-Gated Double δ-Doped AlGaAs/InGaAs HEMTs

B. Y. Chou¹, C. S. Lee¹, W. C. Hsu², S. Y. Chu², Y. N. Lai², C. S. Ho², Z. L. Tseng², M. F. Shih² (1.Feng Chia Univ.(Taiwan), 2.National Cheng Kung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-16] Effect of Two-Step E-Beam SiO₂ Passivation on AlGaN/GaN HEMT Performance

H. L. Yu¹, H. K. Lin¹, Y. J. Chan¹ (1.National Central Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-17] GZO/GaN Schottky Barrier Ultraviolet Band-pass Photodetector with a Low-temperature-grown GaN Cap Layer

K. H. Chang¹, J. K. Sheu¹, M. L. Lee², T. H. Hsueh¹, C. C. Yang¹, K. S. Kang¹, J. F. Huang¹, L. C. Peng¹, W. C. Lai¹ (1.National Cheng Kung Univ.(Taiwan), 2.Southern Taiwan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-18] Effects of Pre-treatment on Passivation of AlGaN/GaN on Silicon HEMTs

J. H. Kim^1,2, H. G. Choi¹, H. J. Song¹, C. H. Roh¹, J. H. Lee¹, J. H. Park², C. K. Hahn¹ (1.Korea Electronics Tech. Inst.(Korea), 2.Korea Univ.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (571 - 580)

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