[G-1-3] Highly Scalable Capacitorless DRAM Cell on Thin-Body with Band-gap Engineered Source and Drain

P. Tang¹, D. Wu¹, L. Zhang¹, R. Huang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-1-4] Performance Improvement of the Capacitorless DRAM Cell with Quasi-SOI Structure Based on Bulk Substrate

D. Wu¹, R. Huang¹, P. Tang¹, Y. Zhang¹, Y. Wang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-1-5] Seed layer and multistack approaches to reduce leakage in SrTiO₃-based MIM capacitors using TiN bottom electrode

N. Menou¹, M. Popovici¹, K. Opsomer^1,2, B. Kaczer¹, M. A. Pawlak¹, A. Franquet¹, C. Detavernier², S. Van Elshocht¹, D. J. Wouters¹, S. Biesemans¹, J. A. Kittl¹ (1.IMEC(Belgium), 2.Ghent Univ.(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-1] Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)

R. Degraeve¹, M. Cho¹, B. Govoreanu¹, B. Kaczer¹, M. B. Zahid¹, G. Van den bosch¹, J. Van Houdt¹, M. Jurczak¹, G. Groeseneken¹ (1.IMEC)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-2] Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices

E. Nowak¹, E. Vianello^1,2, L. Perniola¹, M. Bocquet¹, G. Molas¹, R. Kies¹, M. Gely¹, G. Ghibaudo³, B. D. Salvo¹, G. Reimbold¹, F. Boulanger¹ (1.CEA-LETI/MINATEC(France), 2.Univ. of Udine(Italy), 3.IMEP/INPG(France))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-3] Study of Transient Tunneling Current and Charge-Trapping Behaviors of SONOS-type Devices using Pulse-IV Technique

P. Y. Du^1,2, H. T. Lue¹, S. Y. Wang¹, T. Y. Huang², K. Y. Hsieh¹, R. Liu¹, C. Y. Lu¹ (1.Macronix Iint'l Co., Ltd.(Taiwan), 2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-4] Roles of Traps Generated in Al₂O₃ Film with respect to Memory Characteristics in MANOS

K. Akiyama¹, T. Ozaki¹, H. Higashijima¹, Y. Tanaka¹, T. Shibata¹, Y. Akasaka¹, T. Kaitsuka¹ (1.Tokyo Electron Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-5] A New Method to Extract the Charge Centroid in the Program Operation of MONOS memories

S. Fujii¹, N. Yasuda¹, J. Fujiki¹, K. Muraoka¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-6L] SONOS-Type Nonvolatile Memory Formed on Epitaxial-Ge Layer on Si Substrate

J. R. Wu¹, M. L. Wu¹, L. L. Chen¹, Y. S. Lin¹, Y. H. Wu¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-2-7L] A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized V_TH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories

S. Noda¹, T. Hatanaka¹, M. Takahashi², S. Sakai², K. Takeuchi¹ (1.Univ. of Tokyo(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (221 - 230)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
Next »

▲