[J-1-5] Evaluation of GaN MOSFET with TEOS SiO₂ Gate Insulator

K. Nakatani¹, J. P. Ao¹, K. Ohmuro¹, M. Sugimoto², C. Y. Hu¹, Y. Sogawa¹, Y. Ohno¹ (1.Univ. of Tokushima(Japan), 2.Toyota Motor Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-6] Quasi-Normally-Off AlN/AlGaN/GaN MIS HEMTs Grown on 4 in. Silicon Substrate

S. Tan¹, S. Lawrence Selvaraj¹, T. Egawa¹ (1.Nagoya Inst. of Tech.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-7] Effective Heat Spreading with Separate Ohmic in AlGaN/GaN HEMTs

K. I. Lee¹, J. H. Park¹, H. J. Cho¹, J. C. Her¹, C. S. Yoo^1,3, H. Y. Cha², K. S. Seo¹ (1.Seoul National Univ.(Korea), 2.Hongik Univ.(Korea), 3.Korea Electronic Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-8] GaN Zero-Bias RF Mixer using a Lateral Field-Effect Rectifier

K. Y. Wong¹, W. J. Chen¹, K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-2-1] High-performance inversion-mode III-V MOSFETs enabled by atomic-layer-deposited high-k dielectrics

P. D. Ye¹ (1.Purdue Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-2-2] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N⁺-InGaAs Source Region

T. Kanazawa¹, H. Saito¹, K. Wakabayashi¹, T. Tajima¹, R. Terao¹, Y. Miyamoto¹, K. Furuya¹ (1.Tokyo Tech)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-2-3] Heteroepitaxy of Si_xGe_1-x (x < 5%) Source/Drain on GaAs Substrates

Z. Y. Han¹, G. L. Luo², S. C. Huang², C. H. Ko³, C. H. Wann³, H. Y. Lin³, C. T. Chung¹, C. C. Cheng¹, C. Y. Chang¹, C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Lab.(Taiwan), 3.Taiwan Semiconductor Manufac. Co., Ltd.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-2-4] Performance Projection of III-V and Ge Channel MOSFETs

H. Tsuchiya¹, A. Maenaka¹, T. Mori¹, Y. Azuma¹ (1.Kobe Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-2-5] Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved MOS Characteristics

Y. Terada¹, M. Deura¹, Y. Shimogaki¹, Y. Nakano¹, M. Sugiyama¹ (1.Univ. of Tokyo)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-2-6] Investigation of Strained-Sb Hetrostructures with High Hole Mobility

A. Nainani¹, M. Kobayashi¹, D. Witte¹, T. Irisawa¹, T. Krishnamohan¹, K. Saraswat¹, B. R. Bennett², M. G. Ancona², J. B. Boos² (1.Stanford Univ.(USA), 2.Naval Res. Lab.(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (371 - 380)

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