[A-2-4] Statistical Analysis of Time Constant Ratio of Random Telegraph Signal with Very Large-Scale Array TEG

T. Fujisawa¹, K. Abe¹, S. Watabe¹, N. Miyamoto¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Impact of Channel Doping Concentration on Random Telegraph Signal Noise

K. Abe¹, A. Teramoto¹, S. Watabe¹, T. Fujisawa¹, S. Sugawa¹, Y. Kamata², K. Shibusawa², T. Ohmi¹ (1.Tohoku Univ.(Japan), 2.OKI Semiconductor Miyagi Co., Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-2-6] Experimental Study on I_g RTS Noise of SiON/HfO₂/TaN PMOSFETs

L. Zhang¹, R. Wang¹, J. Zhuge¹, R. Huang¹, T. Yu¹, P. Kirsch², H. H. Tseng², Y. Wang¹ (1.Peking Univ.(China), 2.SEMATECH(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-2-7] Leakage and Matching Optimization of SRAM-cells for Wireless Applications

N. Planes¹, O. Menut¹, C. Laviron², J. Bonnouvrier¹, F. Wacquant¹, R. Ranica¹, C. Boccaccio¹, O. Callen¹, S. Del-Medico¹, D. Noblet¹, M. Haond¹, F. Boeuf¹ (1.STMicroelectronics(France), 2.CEA-LETI(France))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing for Stress Technique in nMOSFETs

H. Itokawa¹, K. Miyano¹, Y. Oshima¹, I. Mizushima¹, K. Suguro¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae¹, H. Itokawa², I. Mizushima², S. Nakamura³, N. Uchitomi¹ (1.Nagaoka Univ. of Tech.(Japan), 2.Toshiba Corp.(Japan), 3.Aoyama Gakuin Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy

Q. Zhou¹, S. M. Koh¹, Z. Y. Zhao², T. Toh², H. Maynard², N. Variam², T. Henry², Y. Erokhin², Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore), 2.Varian Semiconductor(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] Contribution of Carbon to Activation and Diffusion of Boron in Silicon

H. Itokawa¹, Y. Agatsuma², N. Aoki¹, N. Uchitomi², I. Mizushima¹ (1.Toshiba Corp.(Japan), 2.Nagaoka Univ. of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-3-5L] Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique

M. Fukuda¹, Y. Shimamune¹, M. Nakamura¹, K. Tanahashi¹, T. Miyashita¹, M. Nishikawa¹, N. Tamura¹, T. Mori¹, Y. Nara¹, M. Kase¹ (1.Fujitsu Microelectronics Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope

D. Leonelli^1,2, A. Vandooren¹, R. Rooyackers¹, A. S. Verhulst^1,2, S. De Gendt^1,2, M. M. Heyns^1,2, G. Groeseneken^1,2 (1.IMEC(Belgium), 2.Katholieke Univ. Leuven(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (11 - 20)

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