[P-3-17] The Structure and Power-level Dependences of CMOS RF Power Cell Degradation by Hot-carrier Stress with Load Pull System

C. H. Liu¹, Y. K. Su¹, R. L. Wang², C. H. Tu³, Y. Z. Juang³ (1.National Cheng Kung Univ. (Taiwan), 2.National Kaohsiung Normal Univ.(Taiwan), 3.CIC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-18] Anomalous Hot-Carrier-Induced Saturation Drain Current Degradation in DEMOS Transistors

J. F. Chen¹, K. W. Lin¹, S. Y. Chen¹, K. M. Wu², J. R. Shih², K. Wu² (1.National Cheng Kung Univ.(Taiwan), 2.TSMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-19] Subthreshold SRAM with Enhanced Stability using Ultra-Thin-Body and BOX SOI

V. P. H. Hu¹, M. L. Fan¹, P. Su¹, C. T. Chuang¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-20] Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO₂ nMOSFET for Very Low Voltage Operation (0.7V)

W. C. Wu¹, T. S. Chao¹, K. T. Wang¹, S. C. Lee¹, T. H. Chiu¹, T. Y. Lu¹, C. S. Lai², J. C. Wang², M. W. Ma¹, K. H. Kao¹, W. C. Lo¹ (1.National Chiao Tung Univ.(Taiwan), 2.Chang Gung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-21] Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm⁺ Doped Poly Si-SiGe Gate Stack

H. G. Jiménez¹, L. T. Manera^1,2, R. Wada², J. A. Diniz^1,2, I. Doi^1,2, P. J. Tatsch^1,2, H. E. Figueroa^1,2, J. W. Swart^1,2 (1.CCS-UNICAMP(Brazil), 2.Univ. of Campinas(Brazil))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-22] Bi-Directional SCR Device with Dual-Triggered Mechanism for ESD Protection in Extended-Voltage-Swing I/O Application

Z. W. Jiang¹, S. H. Chen¹, M. D. Ker² (1.Indus. Tech. Res. Inst.(Taiwan), 2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-3-23] Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs

C. K. Chiang¹, Y. H. Chen¹, N. C. Su¹, S. J. Wang¹, C. C. Huang¹, H. Y. Huang¹, C. H. Wu² (1.National Cheng Kung Univ.(Taiwan), 2.Chung Hua Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-1] HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell

D. Kosemura^1,4, M. Takei¹, K. Nagata¹, H. Akamatsu¹, M. Hattori¹, D. Katayama¹, T. Nishita², T. Nakanishi², Y. Hirota², M. Machida³, J. Y. Son³, T. Koganezawa³, I. Hirosawa³, A. Ogura¹ (1.Meiji Univ.(Japan), 2.Tokyo Electron Ltd.(Japan), 3.JASRI(Japan), 4.JSPS(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-2] Electrical Characteristics of Engineered ZrO₂/SiO₂ Tunnel Barrier with a High-k HfO₂ Trapping Layer for Non-Volatile Memory

H. W. You¹, G. H. Park¹, J. W. Jung², W. J. Cho¹ (1.Kwangwoon Univ.(Korea), 2.Sejong Univ.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-4-3] Explanation of anomalous erase behaviour and the associated device instability in TANOS Flash using a new trap characterization technique

R. Degraeve¹, M. Zahid¹, G. Van den bosch¹, P. Blomme¹, L. Breuil¹, B. Kaczer¹, M. Mercuri¹, A. Rothschild¹, A. Cacciato¹, M. Jurczak¹, G. Groeseneken², J. Van Houdt¹ (1.IMEC(Belgium), 2.Catholic Univ. Leuven(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (531 - 540)

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