[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya¹, A. Kaneko¹, K. Nagatomo¹, M. Goto¹, K. Tatsumura¹, I. Hirano¹, S. Kawanaka¹, A. Azuma¹, K. Nakajima¹, T. Aoyama¹, K. Eguchi¹, A. Nishiyama¹, Y. Toyoshima¹, Y. Tsunashima¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy

M. Takei¹, D. Kosemura¹, K. Nagata¹, H. Akamatsu¹, S. Mayuzumi^1,2, S. Yamakawa², H. Wakabayashi², A. Ogura¹ (1.Meiji Univ.(Japan), 2.Sony Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Effect of Post Cap-Layer Deposition Annealing Temperature and TiN Thickness on SMDH CMOS Process using TiN Hard Mask

H. Shinohara¹, A. Katakami¹, T. Watanabe¹, M. Hayashi¹, S. Kamiyama¹, Y. Sugita¹, T. Matsuki¹, T. Eimori¹, J. Yugami¹, K. Ikeda¹, Y. Ohji¹ (1.Selete)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Improvement of Interfacial Characteristics and Reliability in Poly/SiON Gate Stack by Catalytic Effect of Hafnium Incorporation Technique

T. Shimizu¹, Y. Arayashiki¹, S. Inumiya¹, K. Nakajima¹, T. Aoyama¹, K. Eguchi¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Influence of Gate Electrode Stress on Channel Stress and Device Performance in Gate-First W/TiN Gate MOSFETs

T. Matsuki¹, J. Yugami¹, T. Eimori¹, Y. Nara¹, K. Ikeda¹ (1.Selete)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Advanced Low Temperature Raised S/D Epitaxy Using Cyclic and Poly-Selective Techniques

N. Loubet¹, P. Khare¹, Q. Liu¹, M. Takayanagi², R. Sampson¹ (1.STMicroelectronics(USA), 2.Toshiba America Electronic Components(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Impact of Very Low Series Resistance due to Raised Metal S/D Structure with Very Low Contact Resistance Silicide for sub-100-nm nMOSFET

R. Kuroda¹, T. Isogai¹, H. Tanaka¹, Y. Nakao¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] First LSI Applicable Thin SOI Films Formed by Lateral Solid Phase Epitaxy

H. Ishida¹, F. Aiso¹, M. Mizukami¹, K. Nishihara¹, T. Iguchi¹, D. Ichinose¹, A. Fukumoto¹, T. Suzuki¹, F. Arai¹, I. Mizushima¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] High Hole Mobilities in Single-Crystalline Ge Thin-Films on Insulating Substrate Formed by SiGe Mixing-Triggered Directional Melting-Growth

K. Toko¹, T. Tanaka¹, T. Sadoh¹, M. Miyao¹ (1.Kyushu Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] High Electron Mobility Ge n-Channel MOSFETs with GeO₂ grown by High Pressure Oxidation

C. H. Lee¹, T. Nishimura^1,2, T. Tabata^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo(Japan), 2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

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