[D-2-4] A Novel Multi-Layered Hetero-Structure of Ni-Zn Ferrite/TaN Buffer for Effective Magnetic Core in On-Chip Inductors

K. Kaneko¹, N. Inoue¹, N. Furutake¹, Y. Hayashi¹ (1.NEC Electronics Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] System-on-Package Platform with Decoupling Capacitor Integration and Thermal Performance Improvement

N. Jeon¹, J. Noh¹, J. Maeng¹, K. S. Seo¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-2-6] Stabilities of La₂O₃ Metal-Insulator-Metal Capacitors under Constant Voltage Stress

S. H. Wu¹, C. K. Deng¹, B. S. Chiou¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Patterning & Metallization Options for Advanced Contact Module Integration

S. Demuynck¹ (1.IMEC)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Effect of Via-Profile on the Via Reliability in Scaled-down Low-k/Cu Interconnects

I. Kume¹, N. Inoue¹, S. Saito¹, N. Furutake¹, J. Kawahara¹, Y. Hayashi¹ (1.NEC Electronics Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] On the Reliability of Cu Contacts for the 32nm Technology Node and beyond

T. Kauerauf¹, S. Demuynck¹, G. Butera¹, J. Bogan¹, Zs. Tökei¹, G. Groeseneken¹ (1.IMEC)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] High Resolution and Thermodynamic Analysis of Interconnect Metals and Diffusion Barriers.

R. Sinclair¹ (1.Stanford Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Rutherford Backscattering Spectrometry Analysis of Growth of Ti-Rich Layer Formed at Cu(Ti)/Low-k Interfaces

K. Kohama¹, K. Ito¹, K. Mori², K. Maekawa², Y. Shirai¹, M. Murakami³ (1.Kyoto Univ.(Japan), 2.Renesas Tech. Corp.(Japan), 3.The Ritsumeikan Trust(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] A Comparison of Lifetime Improvements in Electromigration between Ti Barrier Metal and CVD Co Capping

Y. Kakuhara¹, S. Yokogawa¹ (1.NEC Electronics Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Recent Progress in High-Resolution and High-Speed CMOS Image Sensor Technology

I. Takayanagi¹, J. Nakamura¹ (1.Aptina Japan, LLC.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (101 - 110)

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