[E-3-4L] Characteristic Sensitivity of Multi-Gate and Multi-Fin MOSFETs to Random Dopant Fluctuation and Implication for Digital Circuits

H. W. Cheng¹, C. H. Hwang¹, Y. Li^1,2 (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1L] Monte Carlo Analysis of Optical Pulse Response of Plasmon-Resonant Terahertz Emitter

K. Kubota¹, E. Sano¹, Y. M. Meziani², T. Otsuji² (1.Hokkaido Univ.(Japan), 2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2L] Excellent stability of GaN-on-Si HEMTs with 5 µm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200℃

D. Marcon^1,2, M. Van Hove¹, D. Visalli^1,2, J. Derluyn¹, J. Das¹, F. Medjdoub¹, S. Degroote¹, M. Leys¹, K. Cheng¹, R. Mertens^1,2, M. Germain¹, G. Borghs^1,2 (1.IMEC(Belgium), 2.Katholieke Universiteit Leuven(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3L] High Voltage AlGaN/GaN HEMTs Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Y. H. Choi¹, S. J. Kim¹, Y. S. Kim¹, M. K. Kim¹, O. Seok¹, M. K. Han¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4L] Substantial Reduction of Power Loss in a 14kVA SiC-Inverter

S. Nakata¹, S. Kinouchi¹, T. Kitamura¹, H. Sumitani¹, M. Imaizumi¹, T. Takami¹, T. Oi¹, T. Oomori¹ (1.Mitsubishi Electric Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-4-5L] SiC Power MOSFETs and Diodes for Next Generation Power Modules

J. W. Palmour¹, A. Agarwal¹, R. Callanan¹, J. Richmond¹ (1.Cree, Inc.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-5-1L] Defect-free Isolation on High-Thermal-Conductivity SOI Substrates for Complementary BiCMOS Technology

K. Van Wichelen¹, P. Ong¹, A. Moussa¹, D. Radisic¹, K. Devriendt¹, S. Halder¹, K. Kenis¹, W. Lee¹, B. Vandevelde¹, C. Soonekindt¹, S. A. Hadi¹, T. Smet¹, S. Van Huylenbroeck¹, S. Decoutere¹, M. Seacrist², M. Ries², V. Drobny³, R. Wise³ (1.IMEC(Belgium), 2.MEMC(US), 3.Texas Instruments(US))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-5-2L] Effect of drain bias stress on the stability of nanocrystalline silicon thin film transistor with various channel length

S. J. Kim¹, S. G. Park¹, S. B. Ji¹, M. K. Han¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-5-3L] Multilayer Epitaxial Lateral Overgrowth of Light Emitting Diode with Anisotropi-cally Etched GaN/sapphire Interface.

M. H. Lo¹, P. M. Tu¹, C. H. Wang¹, H. C. Kuo¹, S. C. Wang¹, H. W. Zan¹, C. Y. Chang¹, S. C. Hsu², Y. J. Cheng², S. C. Huang³ (1.National chiao Tung Univ.(Taiwan), 2.Res. Center for Applied Sci., Academia Sinica(Taiwan), 3.Advanced Optoelectronic Technology Inc.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-5-4L] InP Ring-shaped Quantum-dot Molecules Grown by Droplet Molecular Beam Epitaxy

W. Jevasuwan¹, P. Boonpeng¹, S. Panyakeow¹, S. Ratanathammaphan¹ (1.Chulalongkorn Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download