[C-6-5L] Separation of Interface and Bulk traps in Advanced High-k Gate Dielectric MOSFETs from a Low-Leakage Charge Pumping Technique

E. R. Hsieh¹, Y. H. Chu¹, G. D. Lee¹, S. S. Chung¹, W. M. Lin², C. W. Yang², Y. S. Hsieh², L. W. Cheng², C. T. Tsai², G. H. Ma² (1.National Chiao Tung Univ.(Taiwan), 2.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Characteristics and Integration Challenges of FinFET-based Devices for (Sub-)22nm Technology Nodes Circuit Applications

A. Veloso¹, M. J. H. Van Dal², N. Collaert¹, A. De Keersgieter¹, L. Witters¹, R. Rooyackers¹, A. Redolfi¹, S. Brus¹, R. Duffy², B. J. Pawlak², G. Vellianitis², B. Duriez², T. Mérelle², P. P. Absil¹, S. Biesemans¹, M. Jurczak¹, T. Hoffmann¹, R. J. P. Lander² (1.IMEC(Belgium), 2.NXP-TSMC Res. Center(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] High-Performance three-terminal FinFETs by Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation Technologies

K. Sano¹, M. Yonemoto¹, A. Wada¹, K. Endo², T. Matsukawa², M. Masahara², S. Samukawa¹ (1.Tohoku Univ.(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Investigation of Low-Energy Tilted Ion Implantation for FinFET Extension Doping

Y. Liu¹, T. Matsukawa¹, K. Endo¹, S. Ouchi¹, K. Sakamoto¹, J. Tsukada¹, Y. Ishikawa¹, H. Yamauchi¹, M. Masahara¹ (1.AIST)

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4] Impact of Attractive Ion in Undoped Channel on the Characteristics of Nanoscale Multi-Gate FETs: A 3D NEGF Study

Y. Kamakura¹, G. Mil'nikov¹, N. Mori¹, K. Taniguchi¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices

F. Boeuf¹, G. Ghibaudo², T. Skotnicki¹ (1.STMicroelectronics(France), 2.IMEP-LAHC MINATEC(France))

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Comprehensive Study on Electron Mobility and Band Gap in Tensile Strained Ge

M. Ono¹, T. Tezuka¹ (1.MIRAI-Toshiba)

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-8-3] Inversion-Layer Mobility Limited by Coulomb Scattering on Si (100), (110) and (111) n-MOSFETs

Y. Nakabayashi¹, T. Ishihara¹, T. Numata¹, K. Uchida², S. Takagi³ (1.Toshiba Corp.(Japan), 2.Tokyo Tech(Japan), 3.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-8-4] Experimental Study on Hall Factor in Ultrathin-Body SOI n-MOSFETs

S. Kobayashi¹, M. Saitoh¹, Y. Nakabayashi¹, T. Ishihara¹, T. Numata¹, K. Uchida² (1.Toshiba Corp.(Japan), 2.Tokyo Tech(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[C-8-5L] Random-Dopant-Induced Static Noise Margin Fluctuation and Suppression in 16-nm-Gate CMOS SRAM Cell

T. Y. Li¹, C. H. Hwang¹, Y. Li^1,2 (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download