[P-1-10] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET

T. Hayashida¹, K. Endo², Y. X. Liu², T. Matsukawa², S. Ouchi², K. Sakamoto², J. Tsukada², Y. Ishikawa², H. Yamauchi², A. Ogura¹, M. Masahara^1,2 (1.Meiji Univ.(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-11] Hole Tunnel Currents in TiN/HfSiO_xN/SiO₂/p-Si(100) MOS Capacitors

Khairurrijal¹, F. A. Noor¹, M. Abdullah¹, Sukirno¹, A. Ohta², S. Miyazaki² (1.Institut Teknologi Bandung(Indonesia), 2.Hiroshima Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-12] Nanoscale Characterization of HfO₂/SiO_x Gate Stack Degradation by Scanning Tunneling Microscopy

K. S. Yew¹, Y. C. Ong¹, D. S. Ang¹, K. L. Pey¹, G. Bersuker², P. S. Lysaght², D. Heh² (1.Nanyang Tech. Univ.(Singapore), 2.SEMATECH(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-13] Voltage Coefficient of Capacitance Modulation for Sm₂O₃/SiO₂ MIM Capacitors

J. J. Yang¹, J. D. Chen¹, R. Wise², P. Steinmann², M. B. Yu³, Y. C. Yeo¹, C. Zhu¹ (1.National Univ. of Singapore(Singapore), 2.Texas Instruments Inc.(USA), 3.Inst. Of Microelectronics(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-14] Properties of LaAlO Film after Waterless Process using Organic Solvent containing Anhydrous HF

M. Honjo¹, N. Komatsu¹, T. Masuzumi¹, H. Aoki¹, D. Watanabe¹, C. Kimura¹, T. Sugino¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-15] Atomistic Modeling of GeO₂/Ge and SiO₂/Si Interface Structures

T. Onda¹, H. Yamamoto¹, R. Tosaka¹, I. Ohdomari¹, T. Watanabe¹ (1.Waseda Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-16] Highly Reliable Silicon Dioxide Formation Technique with Plasma and Thermal oxidation

Y. Kabe¹, J. Kitagawa¹, Y. Hirota¹, S. Sato², Z. Lu², M. Sometani², R. Hasunuma², K. Yamabe² (1.Tokyo Electron AT Ltd.(Japan), 2.Univ. of Tsukuba(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-17] Enhancement of Carbon Diffusion Caused by Thermal Oxidation on Si_1-xC_x Alloy Layer / Si(001) Surafces

H. Hozumi¹, S. Ogawa¹, A. Yoshigoe², S. Ishidzuka³, J. Harries², Y. Teraoka², Y. Takakuwa¹ (1.Tohoku Univ.(Japan), 2.Japan Atomic Energy Agency(Japan), 3.Akita National College of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-18] Infrared Semiconductor Laser Annealing Used for Activation of Silicon Implanted with Boron and Phosphorus Atoms

N. Sano¹, K. Ukawa², T. Sameshima², M. Naito³, N. Hamamoto³ (1.Hightec Systems Corp.(Japan), 2.Tokyo Univ. of Agri. And Tech.(Japan), 3.Nissin Ion Equipment Co., Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-19] Impact of Carbon Ion Implantation on the Thermal Stability of Nickel Silicide and Shallow Junction

C. M. Lee¹, B. Y. Tsui¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (481 - 490)

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