[P-5-11] A 3-D Binocular Range Sensor LSI with an Enhanced Correlation Signal

M. Kawano¹, N. Kawaguchi², T. Yoshida², Y. Arima² (1.Fukuoka Industry, Sci. and Tech. Foundation(Japan), 2.Kyushu Inst. of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-5-12] 3-D Binocular Range Sensor LSI with A High-Speed Data Output Method

N. Kawaguchi¹, M. Kawano², Y. Arima¹ (1.Kyushu Inst. of Tech.(Japan), 2.Fukuoka Industry, Sci. and Tech. Foundation(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-1] A Micromachined Air-Cavity Oscillator for 94 GHz Applications

Y. Koh¹, U. Son¹, S. Song¹, K. S. Seo¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-2] Fabrication Low-voltage Amorphous Indium Zinc Oxide(a-IZO) Thin Film Transistors using High Dielectric HfO₂ as Gate Insulator at Room Tempature

W. K. Lin¹, C. S. Li², K. C. Liu², S. T. Chang¹ (1.National Chung Hsing Univ.(Taiwan), 2.Chang Gung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-3] Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al₂O₃ on InGaAs with Several Surface Treatments

H. D. Trinh^1,2, E. Y. Chang¹, Y. Y. Wong¹, C. Y. Chang¹, C. C. Yu³ (1.National Chiao Tung Univ.(Taiwan), 2.Hanoi National Univ. of Edu.(Vietnam), 3.National Applied Res. Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-4] Enhanced Photovoltaic Effects of InGaN-based Materials for Future Full-Solar-Spectrum Solar Cells

C. C. Yang¹, J. K. Sheu¹, S. J. Tu¹, C. K. Tseng¹, M. S. Huang¹, K. H. Chang¹, T. H. Hsueh¹, M. L. Lee², L. C. Peng¹, W. C. Lai¹ (1.National Cheng Kung Univ.(Taiwan), 2.Southern Taiwan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-5] Low Leakage AlGaN/GaN HEMTs with a High On/Off Current Ratio

Y. S. Lin¹, Y. W. Lian¹, S. S. H. Hsu¹, T. C. Lee² (1.National Tsing Hua Univ.(Taiwan), 2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-6] High Breakdown GaN Schottky Diodes with Buried P-layer Structure

Y. W. Lian¹, Y. S. Lin¹, S. S. H. Hsu¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-7] High Mobility In-Ga-Zn-oxide Thin-film Transistor with Sb₂TeO_x Gate Insulator Fabricated by Reactive Sputtering

W. S. Cheong¹, S. M. Yoon¹, S. Yang¹, C. S. Hwang¹ (1.ETRI)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-6-8] Investigation of Surface Passivation on III-V compound Solar Cell using Photo-electrochemical Oxidation Method

C. Y. Tseng¹, C. H. Wu², H. Y. Shin², C. T. Lee¹ (1.National Cheng Kung Univ.(Taiwan), 2.Inst. Of Nuclear Energy Res. Atomic Energy Council(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

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